A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor

Tompa, Gary S.; McKee, M.A.; Beckham, C.; Zawadzki, P.; Colabella, J.M.; Reinert, P.D.; Capuder, K.; Stall, R. A.; Norris, P.

doi:10.1016/0022-0248(88)90531-3

Cited by 59 publications

(7 citation statements)

References 8 publications

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“…The development of rotating disk reactors provided an additional viscous drag on the gas flow, pulling the gas flow down and redirecting it outward over the wafer surface [301,369]. Initial reactors consisted of reactants flowing through simple quartz tubes onto a heated substrate holder, with the wafer holder held either parallel or perpendicular to the main gas flow.…”

Section: Evolution Of Reactor Designs: Fundamental Studies To Manufacmentioning

confidence: 99%

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Biefeld

Koleske

Cederberg

2015

Handbook of Crystal Growth

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Section: Evolution Of Reactor Designs: Fundamental Studies To Manufacmentioning

confidence: 99%

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Biefeld

Koleske

Cederberg

2015

Handbook of Crystal Growth

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“…Gallium arsenide (GaAs) is a III/V direct band gap semiconductor with a zinc blend crystal structure used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…For GaAs structure growth, metal organic chemical vapor deposition [1,2], molecular beam epitaxy [2,5], chemical vapor deposition [3] and plasma enhancement chemical vapor deposition [4] are used.…”

Section: Introductionmentioning

confidence: 99%

Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc

Pat

Korkmaz

Özen

et al. 2015

J Mater Sci: Mater Electron

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Using a thermionic vacuum arc, single-crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films produced in a very short time. Crystal direction was found to be (111) plane for the GaAs/PET sample and (022) plane and (133) plane for the GaAs/glass sample, respectively. The average roughness values of the deposited thin films were determined to be approximately 30 nm for GaAs/PET and 60 nm for GaAs/glass. The structures can be seen clearly in field emission scanning electron microscopy and atomic force microscopy. The obtained optical band is nearly the same with literatures values of the GaAs. Although produced structures in different crystal formations, only aggregations dimensions and absorbance of the layers were changed. Obtained refractive index values are nearly same with database info.

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“…Many reactor designs and film deposition processes have been patented. 35, 41 ± 44 A number of firms manufacture serial reactors, e.g., MR-200 (Cambridge Instruments, Great Britain), 45 EMCORE (GS/3300 firm, USA) with a rotating disk and uniformity of the substrate temperature to within 1 8C, 46 EPISON (Thomas Swan Ltd, Great Britain). 47,48 High-performance technological equipment for the preparation of thin layers by CVD has been developed at the Samsung company's institute (Republic of Korea).…”

Section: Equipment Used In Cvd Processesmentioning

confidence: 99%