A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications

Rios, R.; Arora, N.D.; Huang, Cheng−Liang; Khalil, N.; Faricelli, J.; Gruber, L.

doi:10.1109/iedm.1995.499370

Cited by 43 publications

(21 citation statements)

References 8 publications

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“…However, the standard methods for extracting from capacitance-voltage ( ) measurements of large area MOS capacitors are no longer accurate for thin oxides ( 60Å) and consistently result in values larger than real physical thickness. This discrepancy between the electrical and physical/optical characterization techniques is due to the effects of finite thickness of inversion/accumulation layer (including quantum effects) and polysilicon depletion [1]- [4]. Until device simulators can incorporate these effects, there exists an urgent need to identify and characterize the difference between the electrical and physical values of .…”

mentioning

confidence: 99%

Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices

Gupta

Peng

Song

et al. 1997

IEEE Electron Device Lett.

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Abstract-We present an efficient and accurate method to characterize the physical thickness of ultrathin gate oxides (down to 25Å) and the effective polysilicon doping of advanced CMOS devices. The method is based on the model for Fowler-Nordheim (F-N) tunneling current across the gate oxide with correction in gate voltage to account for the polysilicon-gate depletion. By fitting the model to measured data, both the gate oxide thickness and the effective poly doping are unambiguously determined. Unlike the traditional capacitance-voltage (C0V ) technique that overestimates thin-oxide thickness and requires large area capacitor, this approach results in true physical thickness and the measurement can be performed on a standard sub-half micron transistor. The method is suitable for oxide thickness monitoring in manufacturing environments.

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confidence: 99%

Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices

Gupta

Peng

Song

et al. 1997

IEEE Electron Device Lett.

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“…Many forms of quantum correction to classical electronic device models have been proposed or implemented. These include MOSFET-specific quantum corrections [2,3] and generic quantum corrections to the drift-diffusion [4], hydrodynamic [5], and Boltzmann transport equation models [6]. Therefore, the semiconductor industry needs a new fully quantum-mechanically based TCAD (technology computer aided design) tool.…”

Section: Introductionmentioning

confidence: 99%

Development of quantum device simulator NEMO-VN1

Hiền¹,

Lưỡng²,

Minh³

et al. 2009

J. Phys.: Conf. Ser.

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“…Another approach for including QM effects is to add quantum corrections to classical models [4,3,[15][16][17][18][19][20]22,28,30,32,33]. In particular, the density gradient (DG) model developed by Ancona et al is a more rigorous macroscopic transport model which avoids ad hoc assumption to the material parameters or imposing an artificial shape function [34].…”

Section: Introductionmentioning

confidence: 99%