A realistic large-signal MESFET model for SPICE

Parker, Anthony E.; Skellern, D.J.

doi:10.1109/22.622923

Cited by 76 publications

(10 citation statements)

References 25 publications

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“…As seen from Equation (5), the breakdown voltage is dependent on both, the intrinsic gate-source voltage V GSi and the ambient temperature T. It is worth mentioning that in the another SPICE built-in MESFET model, proposed by Parker-Skellern [4,7] instead of the R-S model, the breakdown phenomenon is taken into account. On the other hand, the Parker-Skellern model is unfortunately described by much higher number of parameters, which makes the procedure of estimation of the model parameters more difficult, than in the case of the R-S model with the proposed modifications.…”

Section: Modifications Of the DC Raytheon-statz Modelmentioning

confidence: 99%

Modifications of the DC Raytheon–Statz model for SiC MESFETs

Zarębski

Bisewski

2008

Int J Numerical Modelling

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SUMMARYIn the paper the problem of modelling DC characteristics of SiC MESFETs is presented. Some modifications of the popular Raytheon-Statz model built-in in SPICE are proposed. The original and the modified models are verified experimentally by comparison of the measured and simulated device characteristics. One of the two available today on the market SiC MESFETs-the transistor CRF24010 offered by Cree, Inc. is chosen for investigations.

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Section: Modifications Of the DC Raytheon-statz Modelmentioning

confidence: 99%

Modifications of the DC Raytheon–Statz model for SiC MESFETs

Zarębski

Bisewski

2008

Int J Numerical Modelling

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“…Eine nachfolgende Optimierung ist praktisch nicht n6tig. [10], [17], [18], [19]. Abweichungen ergeben sich meist ira ohmschen Bereich.…”

Section: Das Intrinsische Modellunclassified

Computermodelle für Mikrowellenleistungstransistoren

Smely

Cojocaru

Brazil

et al. 2000

Elektrotech. Inftech.

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Computer simulation for microware power transistors. Coming cell phone systems like UMTS or digital audio broadcast (DAB) systems impose high demands on transmitter amplifier linearity. Analytical models of the microwave transistors used in the driver and power amplifier stages are necessary to describe the large signal behavior for design optimization. This paper shows how DC-IV and small signal measurements are used to generate a large signal model of microwave power transistors. Effects that have special influence on transmitter amplifiers will be emphasized.

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“…This is primarily due to desirable attributes such as high drain-source current, high drain-source breakdown voltage and wideband RF operation [1] [2]. As a result, these devices show great promise in the development of compact, high power microwave circuits [3].…”

Section: Introductionmentioning

confidence: 99%

Large Signal Model of AlGaN/GaN High Electron Mobility Transistor

Xia

Yang

Zhang³

et al. 2011

Communications in Computer and Information Science

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Abstract.A accurate nonlinear large signal model was extracted in this paper. The model is capable of correctly modeling the DC characteristics of AlGaN/GaN HEMT. The parameters of model are obtained from a series of pulsed I-V characteristics and S parameters adopting the on-wafer testing technique and narrow pulse testing technology. The model is implemented in ADS software, simulations and measurements data show its availability and can be used for GaN MMIC's designing.

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A realistic large-signal MESFET model for SPICE

Cited by 76 publications

References 25 publications

Modifications of the DC Raytheon–Statz model for SiC MESFETs

Modifications of the DC Raytheon–Statz model for SiC MESFETs

Computermodelle für Mikrowellenleistungstransistoren

Large Signal Model of AlGaN/GaN High Electron Mobility Transistor

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