A Resonant Gate Driver for Silicon Carbide MOSFETs

Zhang, Jianzhong; Wu, Haifu; Zhao, Jin; Zhang, Yaqian; Zhu, Ye

doi:10.1109/access.2018.2885023

Cited by 26 publications

(11 citation statements)

References 20 publications

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“…Because of the high power density of the cell-pitch, silicon carbide (SiC) trench MOSFET with the ultra-low on-state resistance and excellent switching characteristic is commonly recognized as to be one of the best candidates used in the power systems [1]- [3]. Recently, many studies about the device structures have been conducted for SiC devices [4]- [9].…”

Section: Introductionmentioning

confidence: 99%

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

An¹,

Hu²

2019

IEEE Access

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A split-gate SiC trench MOSFET with a hetero-junction diode (HJD) is proposed and numerically analyzed in this paper. The proposed structure features the HJD to effectively suppress the turn-on of the parasitic body diode and reduce the depletion region in the JFET area. A P+ shielding layer surrounding the HJD and the gate oxide layer is used to alleviate the concentration of the electric field under the gate trench and improve the switching performance. As a result, not only the breakdown voltage is increased by 20.8% at the same level of the on-state resistance but also the miller charge and the switching loss of the proposed structure are reduced by 52% and 39.1%, respectively when compared with those of the conventional SiC trench MOSFET. INDEX TERMS Silicon carbide, heterojunction diode, high breakdown voltage, low on-state resistance, low switching loss.

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Section: Introductionmentioning

confidence: 99%

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

An¹,

Hu²

2019

IEEE Access

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“…Comparing ( 14) and (7), it shows that the negative crosstalk voltage in proposed multi-level gate driver is lower than that of conventional gate driver. Because the conducting resistance R E is much smaller than the resistance R g , the negative voltage spike could be efficiently suppressed.…”

Section: Proposed Gate Driver For Sic Mosfetsmentioning

confidence: 94%

“…SiC MOSFET is one of the most widely used wide bandgap devices in various industries, such as aerospace power supply, wireless power transmission, electrical vehicle drive and grid-connected converters [1][2][3]. Due to the high withstand voltage rating, low on-state resistance and high temperature resistance, SiC MOSFETs will be the main switching device in the future converters [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

Zhu

Yongsheng

et al. 2021

IEEE Access

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In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasitic parameters where crosstalk phenomenon in bridge arm will occur. This paper proposes a novel multi-level gate driver which can suppress the crosstalk phenomenon of the SiC MOSFETs in bridge arm. An auxiliary MOSFET branch between the gate and source of SiC MOSFET is adopted to generate negative and zero gate voltage when SiC MOSFET is turned off. The negative gate voltage may reduce the positive gate crosstalk voltage, and zero gate voltage may reduce negative gate crosstalk voltage. Both the simulations and experiments are carried out to verify the feasibility and high performance of the proposed multi-level gate driver. Compared to the conventional gate driver, the proposed multi-level gate driver reduces the positive crosstalk voltage to -2.2V, and the negative crosstalk voltage to -4.4V, respectively.

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“…Despite the variety of CSG topologies that have been published to improve the gate driving performance [19]- [21], there is a lack of comparison between CSG and VSG. Thus, this section takes the turn-on transient as an example, illustrating the features of CSG and its advantage in improving the performance of SiC MOSFET compared to VSG.…”

Section: Theorectical Analysismentioning

confidence: 99%

A cost-efficient Current-Source Gate Driver for SiC MOSFET Module and its Comparison with Voltage-Source Gate Driver

Xiang

Pickert

2020

2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia)

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A current-source gate driver (CSG) is considered as a candidate to improve the switching performance of Silicon Carbide (SiC) MOSFET compared with a SiC MOSFET powered by a voltage-source gate driver (VSG). Various CSG circuits have been proposed to promote the switching transients by generating a constant gate current. However, those circuits are normally designed with complicated structures and high costs due to extra components and control signals. This paper proposes a cost-efficient approach to adjust the gate current of the conventional VSG which can improve its dynamic performance of the devices. Following the comparison analysis of CSG and VSG, a simple-structure circuit is introduced to replace the gate resistor in the conventional VSG. This circuit transforms that the gate current shows constant levels during the switching transients, which exhibits current-source characteristics. Simulation and experimental studies have been undertaken to verify the effectiveness of the proposed circuit. The results show that the turn-on switching time and oscillation can be reduced using the proposed circuit compared with the conventional VSG and the proposed circuit is less hardware intensive compared to other CSGs.

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A Resonant Gate Driver for Silicon Carbide MOSFETs

Cited by 26 publications

References 20 publications

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

A cost-efficient Current-Source Gate Driver for SiC MOSFET Module and its Comparison with Voltage-Source Gate Driver

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