1995
DOI: 10.1080/10584589508019363
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A review of composition-structure-property relationships for PZT-based heterostructure capacitors

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1995
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Cited by 21 publications
(6 citation statements)
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“…[2][3][4][5][6] It is generally accepted that the fatigue occurs in PZT films with platinum contacts, i.e., Pt/ PZT/Pt structures, and is absent if Pt is replaced with conductive oxides such as RuO 2 , IrO 2 , or SrRuO 3 ͑SRO͒. [7][8][9][10][11][12][13][14][15][16] A fatigue study performed at different frequencies on high quality epitaxial PZT films deposited on ͑100͒-oriented SrTiO 3 ͑STO͒ substrates with either a Pt or a SrRuO 3 ͑SRO͒ top electrode is reported on in this letter. It is shown that under certain conditions the fatigue occurred irrespective of the top electrode.…”
mentioning
confidence: 99%
“…[2][3][4][5][6] It is generally accepted that the fatigue occurs in PZT films with platinum contacts, i.e., Pt/ PZT/Pt structures, and is absent if Pt is replaced with conductive oxides such as RuO 2 , IrO 2 , or SrRuO 3 ͑SRO͒. [7][8][9][10][11][12][13][14][15][16] A fatigue study performed at different frequencies on high quality epitaxial PZT films deposited on ͑100͒-oriented SrTiO 3 ͑STO͒ substrates with either a Pt or a SrRuO 3 ͑SRO͒ top electrode is reported on in this letter. It is shown that under certain conditions the fatigue occurred irrespective of the top electrode.…”
mentioning
confidence: 99%
“…However, some problems, such as electrical degradation, fatigue and aging, so far have limited the wide application of ferroelectrics in microelectronic devices. Although the fatigue effect can be practically eliminated in ferroelectric capacitors using appropriate electrodes, [1][2][3] work is still necessary to better understand this phenomenon. The currently available data indicate that control of domain structure is critical to achieving the optimal physical properties of ferroelectric thin films.…”
Section: Introductionmentioning
confidence: 99%
“…4 These applications make use of the high dielectric constants and coupling factors of PZT. As a result of the various thin film deposition methods, such as radio frequency ͑rf͒ sputtering, 5 laser ablation, 6 metal organic chemical vapor deposition ͑MOCVD͒, 7 and sol-gel method, 8,9 PZT films may exhibit large variations of internal stresses and microstructures. One distinguishes between microstresses and macrostresses.…”
Section: Introductionmentioning
confidence: 99%