A SiGe Highly Integrated FMCW Transmitter Module With a 59.5–70.5-GHz Single Sweep Cover

Milosavljević, Ivan M.; Krčum, Dušan P.; Glavonjić, Ðorđe P.; Jovanovic, S.; Mihajlović, Veljko R.; Tasovac, Darko M.; Milovanović, Vladimir

doi:10.1109/tmtt.2018.2842218

Cited by 21 publications

(4 citation statements)

References 26 publications

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“…Especially, the regulation of the 60-GHz band has been relaxed to allow for a use of a widened spectrum of up to 9 GHz. As a result, a number of groups have targeted the demonstration of 60-GHz radar components [80]. Advanced efforts range from single monostatic transceivers [81], [82] to scalable bistatic realizations [67] that contain up to eight channels per IC [65].…”

Section: B Industrial and Consumer Radar Transceiversmentioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxidesemiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

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Section: B Industrial and Consumer Radar Transceiversmentioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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“…A recent example of an FMCW synthesizer packed in the complete transmitter module [32] provides, in a reasonable modulation time window an extremely large chirp bandwidth of more than 10 GHz thus enabling unmatched range resolutions that are better than 1.5 cm. It is intended to serve as a ubiquitous short-distance radar solution that operates in the unlicensed spectrum band around 65 GHz and to compete in diverse fields of demanding consumer products, like emerging gesture sensors, but also in industrial applications.…”

Section: Fmcw Radar Transmittersmentioning

confidence: 99%

“…Nonlinearity, manifested as an instantaneous frequency deviation from the ideal chirp, disturbs the beat tone and thereby deteriorates radar's measurement accuracy and precision. Even though, faster chirps of high bandwidth, i.e., steeper, are more prone [30] to nonlinear frequency excursions, the above mentioned [32] state-of-the-art radar transmitter is able to achieve the superb frequency sweep linearity under acceptable phase noise levels. Generally speaking, the use of a closed-loop PLL enables the generation of highly linear chirps which avoid smearing of the FFT peaks thus gaining the full benefits of unmatched range resolution associated with high RF bandwidth.…”

Section: Fmcw Radar Transmittersmentioning

confidence: 99%

On fundamental operating principles and range-doppler estimation in monolithic frequency-modulated continuous-wave radar sensors

Milovanović

2018

FACTA U EE

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In an overview of Horizontal Current Bipolar Transistor (HCBT) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit f T and f max of 51 GHz and 61 GHz and f T BV CEO product of 173 GHzV that are among the highest-performance implanted-base, silicon bipolar transistors. HBCT is integrated with CMOS in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. Due to its specific structure, the charge sharing effect can be employed to increase BV CEO without sacrificing f T and f max. Moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage HCBTs with breakdowns up to 36 V integrated in the same process flow with high-speed devices, i.e. at zero additional costs. Double-balanced active mixer circuit is designed and fabricated in HCBT technology. The maximum IIP3 of 17.7 dBm at mixer current of 9.2 mA and conversion gain of-5 dB are achieved.

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“…Oscillators and high-frequency dividers are the key challenges in the radar PLL design. A 77/79-GHz PLL architecture employs a mm-wave oscillator, which feeds both a mm-wave frequency divider back for a phase detection with a frequency reference clock, and a power amplifier (PA) to drive an antenna [1]. The oscillator PN is severely affected by a poor Q-factor of the resonant tank at 77 GHz.…”

Section: Introductionmentioning

confidence: 99%

A 77/79-GHz Frequency Generator in 16-nm CMOS for FMCW Radar Applications Based on a 26-GHz Oscillator with Co-Generated Third Harmonic

Kuo

Zong

Chen

et al. 2019

ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)

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This paper presents a digitally controlled frequency generator for dual frequency-band radar system that is optimized for 16 nm FinFET CMOS. It is based on a 21% wide tuning range, fine-resolution DCO with only switchable metal capacitors. A third-harmonic boosting DCO simultaneously generates 22.5-28 GHz and sufficiently strong 68-84 GHz signals to satisfy shortrange radar (SRR) and medium/long range radar (M/LRR) requirements. The 20.2 mW DCO emits-97 dBc/Hz at 1 MHz offset from 77 GHz, while fully satisfying metal density rules. It occupies 0.07 mm 2 , thus demonstrating both 43% power and 47% area reductions. The phase noise and FoMT (figure-ofmerit with tuning range) are improved by 1.8 dB and 0.2 dB, respectively, compared to state-of-the-art.

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A SiGe Highly Integrated FMCW Transmitter Module With a 59.5–70.5-GHz Single Sweep Cover

Cited by 21 publications

References 26 publications

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

On fundamental operating principles and range-doppler estimation in monolithic frequency-modulated continuous-wave radar sensors

A 77/79-GHz Frequency Generator in 16-nm CMOS for FMCW Radar Applications Based on a 26-GHz Oscillator with Co-Generated Third Harmonic

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