A simple two-step phosphorus doping process for shallow junctions by applying a controlled adsorption and a diffusion in an oxidising ambient

Realization of Atomically Controlled Dopant Devices in Silicon

“…An essential advantage of devices made with STM and MBE is the fact that they are planar with the vertical extension confined to as little as 0.58 nm 27. Planar (two‐dimensional, 2D) doping is known to achieve a higher electrical dopant activation28 compared to bulk (3D) doping and is believed to be favorable to ensure good contact when source–drain regions reach the nanoscale 29. Figure 3 shows three key ingredients of nanoelectronic circuitry: nanoscale interconnects, nonlinear tunnel junctions, and nanodots.…”