A small-signal RF model and its parameter extraction for substrate effects in RF MOSFETs

Lee, Seonghearn; Kim, Cheon Soo; Yu, Hyun Kyu

doi:10.1109/16.930654

Cited by 41 publications

(4 citation statements)

References 7 publications

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“…After the VNA calibration, a set of deembedding devices (Open, Short and Thru) which exclude the SLG channel (but are otherwise identical to the GCPWs) are characterized using the same VNA parameter settings (such as power, intermediate frequency bandwidth, averaging factor, sweep time etc) as during SOLT measurements. The de-embedding devices enable removal of the effects of parasitic impedances from the apparent (or as-measured) response of the GCPWs [62][63][64]. The Open and Short de-embedding structures are used to extract C PS , R PO and C PO , as for figure 1(d).…”

Section: Resultsmentioning

confidence: 99%

Transport conductivity of graphene at RF and microwave frequencies

et al. 2016

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We measure graphene coplanar waveguides from direct current (DC) to f =13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an ω 2 dependence (where ω = 2πf ), but the intrinsic conductivity (without the influence of parasitic impedances) is frequencyindependent. Consequently, in our devices the real part of the complex alternating current conductivity is the same as the DC value and the imaginary part∼ 0. The graphene channel is modeled as a parallel resistive-capacitive network with a frequency dependence identical to that of the Drude conductivity with momentum relaxation time∼ 2.1ps, highlighting the influence of alternating current (AC) electron transport on the electromagnetic properties of graphene. This can lead to optimized design of high-speed analogue field-effect transistors, mixers, frequency doublers, low-noise amplifiers and radiation detectors.

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Section: Resultsmentioning

confidence: 99%

Transport conductivity of graphene at RF and microwave frequencies

et al. 2016

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“…So there may be some error occurred. At low frequencies the MOS structure is in thermal equilibrium under small signal ac excitation provided that minority carriers can respond to variations in the AC field to prevent energy loss [32][33][34][35]. The increase in capacitance in inversion only occurs if the generation/recombination of electrons can keep up with the applied ac signal.…”

Section: Resultsmentioning

confidence: 99%

“…To fabricate metal-oxide-semiconductor, the silicon wafers were cleaned by following the standard cleaning procedure to remove insoluble organics and metallic contaminants. After that, a layer of oxide, approximately 650 Å thick, was grown on the silicon wafers using a dry oxidation process at 950˚C for 2 hour, with a pre-ramp and post-ramp of 800˚C with N 2 (12) and O 2 (32). For top layer we will use Aluminum due to its ease of processing, ability to reduce native SiO 2 , which is always present in silicon wafers, exposed to atmosphere and its low resistivity.…”

Section: Process For Measurements Of Device Parametersmentioning

confidence: 99%

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

Srivastava¹,

Yadav²,

Singh³

2011

IJCNS

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To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to -5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.

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“…For the given design of DP4T DG RF CMOS switch capacitance model under the operating condition is shown in Figure 5. Here we consider the ON status, because the insertion loss is conquered by its ON-resistance and substrate resistance [16,17]. Isolation of the switch is finite due to signal coupling through the parasitic and junction capacitances.…”

Section: Capacitive Model Of Dp4t Dg Rf Cmos Switchmentioning

confidence: 99%

Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

Srivastava¹,

Yadav²,

Singh³

2011

WET

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In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF

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A small-signal RF model and its parameter extraction for substrate effects in RF MOSFETs

Cited by 41 publications

References 7 publications

Transport conductivity of graphene at RF and microwave frequencies

Transport conductivity of graphene at RF and microwave frequencies

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

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