A stand for a projection EUV nanolithographer-multiplicator with a design resolution of 30 nm

Volgunov, D. G.; Zabrodin, I. G.; Zakalov, B. A.; Zuev, S. Yu.; Kas’kov, I. A.; Kluenkov, E. B.; Pestov, A. E.; Полковников, В. Н.; Салащенко, Н. Н.; Suslov, L. A.; Toropov, M. N.; Чхало, Н. И.

doi:10.3103/s1062873811010278

Cited by 20 publications

(1 citation statement)

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“…To study photoresists and improve EUV lithography processes, there are three test benches with two mirror projection objectives with NA = 0.3. A two mirror nanolithographic test bench with a calculated resolution of 30 nm was created at the IPM RAS in 2010 [43]. New operating wave lengths of lithography (in the vicinity of 6.7 nm) have been actively discussed until recently [12,13].…”

Section: Basic Applications Of High Precision Opticsmentioning

confidence: 99%

Diffraction-limited short-wavelength optics: Analysis, fabrication, and application

Салащенко

Чхало

2012

J. Synch. Investig.

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The fundamental physical and technological problems of fabrication and testing, as well as new optics applications providing diffraction quality images (with spatial resolutions varying from tens of nanom eters to several nanometers) at wavelengths of 3-60 nm, are analyzed. This type of optical systems is required in the mass production of very large scale integrated circuits (ICs) (projection nanolithography), nanocerti fication (high resolution X ray microscopy), macrodiagnosis (extraterrestrial astronomy), and in fundamen tal investigations of the interaction between a material (vacuum) and superstrong electromagnetic fields (10 20 -10 23 W/cm 2 ). The current state of interaction studies around the world has been reviewed.

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Section: Basic Applications Of High Precision Opticsmentioning

confidence: 99%