A possibility for fabrication of a high-sensitivity accelerometer is considered. The linear acceleration of a sensor causes displacement of the proof mass electrode. The displacement detector is based on a strong dependence of the tunneling or cold emission current on the gap between the electrodes. The geometry of the electrodes that provides the best sensitivity is determined. The accelerometer with tunneling-emission electrodes is fabricated. At frequencies up to 5 kHz the resolution reaches 10 4 g Hz 1 2 in the tunneling mode and 10 3 g Hz 1 2 in the emission mode.

Key parameters for the reactive ion beam etching of glass, quartz and silicon are studied. The dependence of the etching rate on chamber pressure and etching time is investigated. The etching zone has the form of a long (~50 mm), narrow (~1 mm) strip with depth homogeneity at a level of 0.2%. Such a zone is a handy tool for correcting the shape of cylindrical surfaces.

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A method of contact scanning probe lithography has been developed to enable fabrication of elements with characteristic dimensions of about 50 nm. The method involves deposition of a thin-film two-layer polymer-metal mask coating, mechanical or thermal nonplastic deformation of the top metal layer with a probe microscope, the transfer of the pattern through the polymer by means of dry etching and the formation of various nanoelements through this prepared mask. The method is applicable to any materials relevant to the formation of different nanometre objects-both metal and dielectric-on their surface.

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