A Theoretical Study on Charge Transfer of Twisted T-Graphene Nanoribbon Surface

Bilayer graphene (BLG) is a well-known allotrope of carbon atoms and nominated to be used as an appropriate transistor channel. In spite of advances for preparing defect-free and crystalline BLGs, unwanted defects are emerged during immature fabrication process. This paper investigates I–V curves of bilayer graphene nanoribbon FET (BLGNRFET) in the presence of one of the most possible defect called Stone-Wales (SW) defect. These defects are located at three positions along and across the channel. Simulation approach is performed by fully quantum-mechanical numerical calculations using Non-Equilibrium Green’s Function (NEGF) formalism. The role of the defect position is studied for both OFF and ON states. Furthermore, the effect of the defect position is included on several digital and analog metrics such as delay, power delay product and cut-off frequency.

mentioning

confidence: 99%

Local Impact of Stone-Wales Defect on a Bilayer Graphene Nanoribbon FET

Owlia¹,

Nayeri

2021

“…6 In contrast, in graphene nanoribbons GNR, by modifying the graphene into a one-dimensional narrow strip pattern, due to quantum confinement in the width direction, a bandgap appears which the size of the bandgap depends on the width of the nanoribbon. [7][8][9] Based on the nanoribbon edges shape, GNR's are divided into zigzag (ZGNR) and armchair (AGNR). 6,10 ZGNR's have metallic properties for any amount of width.…”

mentioning

confidence: 99%

A Scheme of Quantum Tunnel Field Effect Transistor Based on Armchair Graphene Nano-Ribbon

Vali

Moezi

Heidari

et al. 2021

We proposed a scheme of armchair graphene nanoribbon (AGNR) based tunnel field-effect transistor (TFET). The simulated device consists of two (AGNR) electrodes with zigzag termination that are separated by a narrow gap. The Fermi level of two electrodes is controlled with a common back gate. The main idea is based on taking advantage of the electronic effects of smooth edge atoms of (AGNR) and investigatinge the effect of applied small uniaxial tensile strain and gate voltage on the output characteristics of simulated TFET. Our analysis shows that the simulated device will have a pronounced negative differential conductance high peak to valley ratio at room temperature. We see that by applying the uniaxial tensile strain, this ratio upgrades to 70 for (AGNR) with width N=13.

“…Doping engineering, work function engineering, voltage difference engineering, and many other techniques have all been proposed by many researchers to increase the efficiency of these type of devices. [17][18][19][20][21][22][23][24][25][26] It should be noted that all of the reported structures are usually configured in a double-gate (DG) form in order to increase the gate control over the channel. In fact, fabricating DG is one of the serious problems which can be considered as one of the important technical challenges.…”

mentioning

confidence: 99%

Single Gate Graphene Nanoribbon-on-Insulator (GNROI) FET as a Novel Strategy to Enhance Electrical Performance-Numerically RF and DC Characteristics Extraction

Anvarifard¹,

Ramezani²,

Amiri³

2020

Graphene nanoribbon Field Effect Transistor (GNRFET) as a recently introduced interesting candidate has gotten a great deal of interest in many device fields. The paper has suggested a novel configuration in the case of only single gate on the top channel. The GNR is deposited on SiO 2 considered as the thick buried oxide instead of SiC material in the single gate conventional GNRFET. This reformation is led to the gradual variation of the surface potential thus increasing the electric field and electron velocity. An increase in the drain current for the proposed device is the most important exploration in this work. The numerically extracted parameters by TCAD revealed the electrical performance improvement for both the DC and RF conditions in the cases of the ON current, sub-threshold swing, DIBL, I on /I off , parasitic capacitances, transconductance, power gains, and output conductance. It is worth noting that the short channel effects are well controlled in the new proposed configuration. Also, the impact of different High-K dielectrics as the buried oxide on the electrical performance has been studied and the most suitable buried oxide has been selected to reach the best results.