A thickness model for the stack in the titanium salicide process module

Tsai, Jiunn-Yann; Apte, Pushkar P.

doi:10.1016/0040-6090(96)80081-2

Cited by 6 publications

(6 citation statements)

References 6 publications

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“…In the same way, transition metal silicides find applications as contacts and interconnects in MOS silicon integrated circuits for reducing the resistance of polysilicon gates and source/drain diffusion regions, because of their high temperature stability, low resistivity, chemical compatibility, electromigration resistance, and low barrier height [9,14].…”

Section: Introductionmentioning

confidence: 99%

“…The lateral growth of TiSi 2 induces shorting between gate and source-drain regions that can result in low yield for applications to Complementary Metal Oxide Semiconductor (CMOS) components. Most works report that the reaction in lateral directions is drastically reduced when it occurs in a nitrogen ambient [9,14,19,20].…”

Section: Introductionmentioning

confidence: 99%

“…The very attractive physical and chemical properties of titanium nitrides (TiN) make them very efficient for a great number of applications [1][2][3][4][5][6][7][8][9][10][11]. TiN exhibits a high melting point of 3220 K greater than those of ceramic materials such as Al 2 O 3 or Si 3 N 4 .…”

Section: Introductionmentioning

confidence: 99%

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Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

et al. 2017

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Abstract:The physical properties including the mechanical, optical and electrical properties of Ti nitrides and silicides are very attractive for many applications such as protective coatings, barriers of diffusion, interconnects and so on. The simultaneous formation of nitrides and silicides in Ti films improves their electrical properties. Ti films coated on Si wafers are heated at various temperatures and processed in expanding microwave (Ar-N 2 -H 2 ) plasma for various treatment durations. The Ti-Si interface is the centre of Si diffusion into the Ti lattice and the formation of various Ti silicides, while the Ti surface is the centre of N diffusion into the Ti film and the formation of Ti nitrides. The growth of silicides and nitrides gives rise to two competing processes which are thermodynamically and kinetically controlled. The effect of thickness on the kinetics of the formation of silicides is identified. The metastable C 49 TiSi 2 phase is the main precursor of the stable C 54 TiSi 2 phase, which crystallizes at about 600 • C, while TiN crystallizes at about 800 • C.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

et al. 2017

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“…In interconnection processes, TiN processes are well known to give good characteristics as a diffusion barrier for Al-or Cu-based multilevel metallization. [1][2][3][4][5] Also, a TiSi x / TiN bilayer has been reported to show low contact resistance (R c ), low stress, and a flat interface. Recently, some reports have been made on the application of Ti insertion into a W polygate stack with a low-gate R c value.…”

Section: Introductionmentioning

confidence: 99%

Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices

Sung¹,

Lim²,

Cho³

et al. 2007

jjap

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Tungsten dual polygate (W-DPG) stacks with diffusion barriers formed by the Ti(N) process were investigated in terms of gate contact resistance (R c ) and the polydepletion effect. The Ti layer in the Ti/WN diffusion barrier is found to be converted into a TiSi x /TiN bilayer during the postdeposition annealing process. The TiSi x reaction between Ti and p+ polycrystalline silicon (poly-Si) effectively prevents the formation of a parasitic dielectric layer, which could lead to low-gate R c . The TiN reaction between Ti and WN minimizes the occurrence of the TiSi x reaction, which effectively reduces p+ polydepletion caused by the out-diffusion of boron during the postdeposition annealing process. Therefore, poly-Si/Ti/WN/W could be a promising tungsten dual polygate stack, which satisfies high-speed requirements in dynamic random-access memory (DRAM) devices.

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“…For example, the TiN which is a conventional diffusion barrier metal against the Cu, Al based multilevel metallization can be used. 10,11 Also, intrinsically created thin metal nitride oxide layer at the TMO/TiN interface can effectively prevent the oxygen ion's moving into the electrode. 12 Therefore, systematic studies to understand the switching behaviors depending on the various TMOs/TiN memristor structures are necessary for the better understanding of bipolar based ReRAM switching phenomena.…”

mentioning

confidence: 99%

Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

Kim¹,

Sung²,

Kim³

et al. 2011

J. Electrochem. Soc.

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A thickness model for the stack in the titanium salicide process module

Cited by 6 publications

References 6 publications

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices

Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

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