2004
DOI: 10.1109/lpt.2003.823092
|View full text |Cite
|
Sign up to set email alerts
|

A Tunable GaInAsP–InP Optical Microring Notch Filter

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
6
0

Year Published

2009
2009
2020
2020

Publication Types

Select...
5
2
2

Relationship

0
9

Authors

Journals

citations
Cited by 39 publications
(7 citation statements)
references
References 8 publications
1
6
0
Order By: Relevance
“…Twentythree In 0.63 Ga 0.37 As 0.80 P 0.20 (10 nm) wells and twenty-four InP (10 nm) barriers have been used for the MQW layer (band gap of 1417 nm). The calculated MQW quadratic and the linear electro-optic coefficients at 1550 nm are s QW =3.85 × 10 -15 cm 2 /V 2 and r QW =-2.1 × 10 -10 cm/V, respectively, which are close those given [6,8] for similar epitaxial structures. With I-InGaAsP (1.05 eV band gap) on top and bottom of MQW layer, the total I region thickness is 490 nm.…”
Section: The Modulation Processsupporting
confidence: 81%
“…Twentythree In 0.63 Ga 0.37 As 0.80 P 0.20 (10 nm) wells and twenty-four InP (10 nm) barriers have been used for the MQW layer (band gap of 1417 nm). The calculated MQW quadratic and the linear electro-optic coefficients at 1550 nm are s QW =3.85 × 10 -15 cm 2 /V 2 and r QW =-2.1 × 10 -10 cm/V, respectively, which are close those given [6,8] for similar epitaxial structures. With I-InGaAsP (1.05 eV band gap) on top and bottom of MQW layer, the total I region thickness is 490 nm.…”
Section: The Modulation Processsupporting
confidence: 81%
“…Also this structure has been considered Manuscript as all pass filter and as an add-drop filter (including an extra microfiber beside the knot) with QF of 13000 [13]. For the output spectrum of a filter, the flatness and the width of both transmission and rejection regions on the spectrum are important characteristics especially for wavelength division multiplexing applications and notch filters [14], [15]. Sharper roll off, adjustable pass band and less in-band ripple spectrum provide a desired filter [15], [16].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, the use of active semiconductor based disk resonator devices have been reported (Djordjev et al 2002), where the response can be altered via the application of a voltage. An "active" ring resonator structure opens a wider range of applications, such as optical modulator (Xu et al 2005), tunable filters (Grover et al 2004).…”
mentioning
confidence: 99%