A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack

Koda, Yasumasa; Kuroda, Rihito; Nakazawa, Takashi; Nakao, Yukihisa; Sugawa, Shigetoshi

doi:10.1117/12.2005574

Cited by 6 publications

(7 citation statements)

References 9 publications

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“…In this work, 18 transfer gates were placed along one of the long sides of each PD. with optimized mixed gas flow rate and deposition pressure [13][14] .…”

Section: Fig4 Shows the Circuit Block Diagram Of The Developedmentioning

confidence: 99%

[Paper] A High Quantum Efficiency High Readout Speed 1024 Pixel Ultraviolet-Visible-Near Infrared Waveband Photodiode Array

Kuroda

Akutsu

Koda

et al. 2016

MTA

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Spectrometers are widely used in the various fields of scientific analyses, life science, environmental assessment, food inspection and so on 1)~3). High sensitivity for UV-VIS-NIR light waveband is strongly required for PDA used in spectrometers to analyze various measurement samples accurately. In addition, a high readout speed performance is beneficial to improve the measurement throughput. Furthermore, high stabilities of light sensitivity and dark current of PDA toward UV-light irradiation are required for a long time use of the spectrometers without complicated maintenance. The quantum efficiency (QE) of a light detector is determined by the product of light transmittance to the photoelectric conversion part of PD and the efficiency to collect photo-generated carriers. In recent years, a Si photodiode junction technology to achieve high incident light sensitivity and high stability toward UV-light using a surface high concentration layer with steep dopant concentration profile formed on flattened Si surface has been developed, and single PD, PDA and area CMOS image sensors using the developed technology have been reported to exhibit superior characteristics 4)~9). Fig.1 shows the schematic image of a spectrometry system with a diffraction grating and a PDA as spectral light detector. Spectral light is irradiated to the pre-designated positions of the PDA. For general PDAs, the dielectric film above the PD is uniformly formed across the whole light receiving surface, thus, it is difficult to optimize the transmittance for all of the receiving light waveband. Meanwhile, image sensors with Fabry-Perot spectral filters directly formed on the top surface of monochrome CMOS image sensors have been reported to be useful to form hyperspectral line scan imagers 10). The reported Abstract A high QE and high readout speed ultraviolet-visible-near infrared (UV-VIS-NIR) light waveband linear photodiode array (PDA) is demonstrated in this paper. For the developed 1024 pixel PDA with the pixel size of 25 µm H × 2500 µm V , seven types of high transmittance optical layers were introduced for multiply divided pixel groups to achieve high QE for receiving light waveband and multiple transfer gates were placed along the long side of PD to improve readout speed. The fabricated PDA exhibited an average QE of 70 % for 200-800 nm and 80 % for 200-320 nm wavebands, the full well capacity (FWC) of over 70 pC and the line scan period of 0.33 msec simultaneously. The condition of top surface dopant concentration of the surface p + layer of photodiode (PD) to prevent sensitivity degradation due to deuterium lamp irradiation was also clarified.

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“…In this work, 18 transfer gates were placed along one of the long sides of each PD. with optimized mixed gas flow rate and deposition pressure [13][14] .…”

Section: Fig4 Shows the Circuit Block Diagram Of The Developedmentioning

confidence: 99%

[Paper] A High Quantum Efficiency High Readout Speed 1024 Pixel Ultraviolet-Visible-Near Infrared Waveband Photodiode Array

Kuroda

Akutsu

Koda

et al. 2016

MTA

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“…In order to improve the UV response of Si photodiode, pure boron (PureB) technology is developed for an ultrathin and steep junction [ 9 , 10 ], in which the photogenerated carriers are drifted quickly to the depletion layer under the action of steep junction in order to form the detectable photocurrent. The PureB layer provides an effective p + -doping of the semiconductor surface to form a nanometer-thin p + -n junction and a light-entrance window as well.…”

Section: Introductionmentioning

confidence: 99%

“…The PureB layer provides an effective p + -doping of the semiconductor surface to form a nanometer-thin p + -n junction and a light-entrance window as well. The external quantum efficiency of the photodiode can reach as high as 96% (0.2 A/W) for the incident light of 256 nm [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility

Liu¹,

Xu²,

Jin³

et al. 2022

Sensors

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Highly sensitive ultraviolet (UV) photodetectors are highly desired for industrial and scientific applications. However, the responsivity of silicon photodiodes in the UV wavelength band is relatively low due to high-density Si/SiO2 interface states. In this paper, a coplanar avalanche photodiode (APD) was developed with a virtual guard ring design. When working in Geiger mode, it exhibited a strong UV response. The responsivity of 4 × 103 A/W (corresponding to a gain of 8 × 106) at 261 nm is measured under the incident power of 0.6 μW with an excess bias of 1.5 V. To the best of our knowledge, the maximum 3-dB bandwidth of 1.4 GHz is the first report ever for a Si APD when working in the Geiger mode in spite of the absence of an integrated CMOS read-out circuit.

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“…A very high QE of 80% is achieved at the wavelength of 260 nm. By tuning the thickness and layer condition of the filter, the peak sensitivity wavelength is able to be optimized [24]. PD technology requires special processes such as shallow ion implantation and rapid activation annealing.…”

Section: Fabricated Pd Characteristicsmentioning

confidence: 99%

“…A high transmittance band pass filter composed of multilayer stack of SiN and SiO 2 is deposited right above the PD [24]. Here, SiN film deposition conditions were specially tuned in order to achieve the high transmittance to UV-light waveband.…”

Section: Fabricated Pd Characteristicsmentioning

confidence: 99%

Si image sensors with wide spectral response and high robustness to ultraviolet light exposure

Kuroda

Sugawa

2014

IEICE Electron. Express

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Si image sensors with a wide spectral response range and a high robustness to ultraviolet light exposure based on flattened Si surface are described in this paper. A photodiode (PD) fabrication technology is developed to form a thin surface high concentration layer with steep dopant profile on flattened Si surface. Due to this, PDs with a wide spectral response ranging from 200 to 1000 nm is achieved with almost 100% internal quantum efficiency to ultraviolet light (UV-light) waveband. In addition, high robustness of light sensitivity and dark current toward UV-light exposure is obtained. The developed technology is applied to in-pixel buried PDs of photodiode arrays and a CMOS image sensor. The advanced performances of fabricated sensors are verified with experimental results.

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A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack

Cited by 6 publications

References 9 publications

[Paper] A High Quantum Efficiency High Readout Speed 1024 Pixel Ultraviolet-Visible-Near Infrared Waveband Photodiode Array

[Paper] A High Quantum Efficiency High Readout Speed 1024 Pixel Ultraviolet-Visible-Near Infrared Waveband Photodiode Array

Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility

Si image sensors with wide spectral response and high robustness to ultraviolet light exposure

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