A Vacancy-Interstitial Defect Pair Model for Positive-Bias Temperature Stress-Induced Electron Trapping Transformation in the High- $\kappa $ Gate n-MOSFET

Gu, Chenjie; Ang, Diing Shenp; Gao, Yuan; Gu, Renyuan; Zhao, Ziqi; Zhu, Chao

doi:10.1109/ted.2017.2694440

Cited by 6 publications

(2 citation statements)

References 44 publications

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“…5,21 Meanwhile, first-principles simulation, as one of the most effective and precise methods to investigate the specific defect characteristics in the material, is also extensively implemented in the BTI study. [22][23][24] A plethora of modeling and simulation works are performed to investigate the V O characteristics under the PBTI stress. The results obtained from these studies support the inference that V O is a shallow electron trap center and could be an effective electron capturing point under the PBTI stress.…”

Section: Introductionmentioning

confidence: 99%

The role of the disordered HfO2 network in the high-κ n-MOSFET shallow electron trapping

Zhou

Ang

et al. 2019

Journal of Applied Physics

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Current understanding of the bias temperature instability degradation usually comprises two parts: (1) shallow-level component that can recover within a short time and (2) deep level traps that the emission time of the trapped carrier is extremely long. Prevenient studies of the positive bias temperature instability degradation in the high-κ n-MOSFET indicate that oxygen vacancy (V O ) is the dominant defect type that responds for the shallow electron trapping. However, recent experimental results reveal that the V O defect density required to accommodate the experimental measured recoverable threshold voltage degradation (ΔV th ) is much higher than that of the reasonable atomic structure in the amorphous HfO 2 . On the other hand, investigations on the disordered Hf-O-Hf network in the amorphous HfO 2 reveal their capabilities as charge trapping centers; therefore, in this work, atomic simulation work is performed, and our results show that the disordered Hf-O-Hf networks can act as effective electron capture centers with shallow levels near the Si conduction band. Moreover, the high density of the stretched Hf-O-Hf networks in the amorphous HfO 2 also significantly enriches the shallow electron traps in the oxide.

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Section: Introductionmentioning

confidence: 99%

The role of the disordered HfO2 network in the high-κ n-MOSFET shallow electron trapping

Zhou

Ang

et al. 2019

Journal of Applied Physics

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“…In addition, Gao et al [56] reported that the electron detrapping is relatively constant and independent of the dynamic PBTI stress/relax cycle at the low oxide field of 5. that distinct defects are active under PBTI [56]. These experimental results exhibiting shallow-to-deep electron-trapping transformation under PBTI stressing were explained by Gu et al using a vacancy-interstitial (V O -O i ) defect pair model [135]. In this model, a V O -O i defect pair may evolve into a more stable state, with O i migrating from its original location to a different lattice vacancy position, marked by a substantial reduction in the system energy at the end of the O i migrating process and corresponding to an electron-trap state shifting from a shallow to a deeper energy level.…”

Section: R and P Components Under Pbtimentioning

confidence: 78%

Bias temperature instability study on switching defects in SiON and high-K gate dielectrics

Tung¹

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provided the initial project direction, gave suggestions in the interpretation of the measurement data, and edited the manuscript.  Dr. A. A. Boo collected the measured threshold voltage shift, analyzed the data collected and drafted the manuscript.  I collected the measured gate current shift (stress-induced leakage current, SILC), analyzed the data collected and assisted in drafting the manuscript. Chapter 4, Section 4.3 is published as Z. Y. Tung and D. S. Ang, "Transient to temporarily permanent and permanent hole trapping transformation in the small area SiON p-MOSFET subjected to negative-bias temperature stress," in Proceedings IEEE 21st International Symposium on the Physical and Failure Analysis of Integrated

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Electron trapping in HfO2 layer deposited over a HF last treated silicon substrate

Sambuco Salomone,

Cassani,

Garcia-Inza

et al. 2025

Microelectronic Engineering

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A Vacancy-Interstitial Defect Pair Model for Positive-Bias Temperature Stress-Induced Electron Trapping Transformation in the High- $\kappa $ Gate n-MOSFET

Abstract: A vacancy-interstitial defect pair model for positive-bias temperature stress-induced electron trapping transformation in the high-κ gate n-MOSFET

Cited by 6 publications

References 44 publications

The role of the disordered HfO2 network in the high-κ n-MOSFET shallow electron trapping

The role of the disordered HfO2 network in the high-κ n-MOSFET shallow electron trapping

Bias temperature instability study on switching defects in SiON and high-K gate dielectrics

Electron trapping in HfO2 layer deposited over a HF last treated silicon substrate

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