A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Kanechika, Masakazu; Sugimoto, M.; Soejima, Narumasa; Ueda, Hiroyuki; Ishiguro, Osamu; Kodama, Masahito; Hayashi, Eiko; Itoh, Kenji; Uesugi, Tsutomu; Kachi, Tetsu

doi:10.1143/jjap.46.l503

Cited by 169 publications

(93 citation statements)

References 3 publications

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“…However, these substrates had a dislocation density of ∼10 6 cm −2 , which is too high for fabricating highvoltage (∼1 kV) vertical power devices. Several reports on vertical GaN devices fabricated on GaN substrates have been published [23,24,25,26,27], but their performance was inferior to that of SiC and Si power devices. Although this was mainly due to the low crystal quality, the experiments also identified many problems with the device fabrication process.…”

Section: Vertical Gan Power Devicesmentioning

confidence: 99%

Current status of GaN power devices

Kachi

2013

IEICE Electron. Express

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Abstract:The performance of GaN power devices has been rapidly improving. Recently, the main approach is the use of AlGaN/GaN HEMT structures on Si substrates, for which the target breakdown voltage is initially 600 V or less. Although issues still remain with regard to current collapse and the threshold voltage required for normallyoff operation, many companies have announced their intention to commercialize such devices. In this report, recent developments concerning GaN power devices are reviewed, and unresolved issues and future expectations are discussed.

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Section: Vertical Gan Power Devicesmentioning

confidence: 99%

Current status of GaN power devices

Kachi

2013

IEICE Electron. Express

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“…[2][3][4][5][6][7] The GaN device has once again attracted our attention because of its excellent characteristics as a power device. 8,9 It has a superior breakdown field, a high electron saturation velocity, and a wide bandgap energy compared with those features of Si based power devices. 10,11 Many GaN devices have been grown on other substrates, such as sapphire, Si, and SiC substrates, through hetero-epitaxial growth.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer

et al. 2018

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We evaluated the lattice curvature, crystallinity, and crystalline homogeneity of a GaN layer on a free standing GaN substrate using lattice orientation measurements, θ rocking curves, and reciprocal space mapping from synchrotron X-ray diffraction topography, and X-ray diffraction. The lattice curvature of the 2-inch GaN homo-epitaxial layer was a concave bend, which had a curvature radius of approximately 20.7 m. The GaN layer was epitaxially grown on the GaN substrate and had good crystallinity with a high homogeneity.

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“…The coherent charge relaxation models require the use of solid-state materials for their implementation. One of the possible applications is, for example, to insulated and suspended gate FET devices (37,38) that may use a selective layer made of conducting polymer (37). Application of the proposed sensing mechanisms to the devices in refs.…”

Section: Limits Of Applicabilitymentioning

confidence: 99%

Sensing of molecules using quantum dynamics

Migliore¹,

Naaman

Beratan

2015

Proc. Natl. Acad. Sci. U.S.A.

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We design sensors where information is transferred between the sensing event and the actuator via quantum relaxation processes, through distances of a few nanometers. We thus explore the possibility of sensing using intrinsically quantum mechanical phenomena that are also at play in photobiology, bioenergetics, and information processing. Specifically, we analyze schemes for sensing based on charge transfer and polarization (electronic relaxation) processes. These devices can have surprising properties. Their sensitivity can increase with increasing separation between the sites of sensing (the receptor) and the actuator (often a solid-state substrate). This counterintuitive response and other quantum features give these devices favorable characteristics, such as enhanced sensitivity and selectivity. Using coherent phenomena at the core of molecular sensing presents technical challenges but also suggests appealing schemes for molecular sensing and information transfer in supramolecular structures.

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A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Cited by 169 publications

References 3 publications

Current status of GaN power devices

Current status of GaN power devices

Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer

Sensing of molecules using quantum dynamics

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