Accelerated testing for time dependent dielectric breakdown (TDDB) evaluation of embedded DRAM capacitors using tantalum pentoxide

Inani, A.; Koldyaev, Victor; Graves, Spencer

doi:10.1016/j.microrel.2007.07.053

Cited by 14 publications

(8 citation statements)

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“…For the motion of electrons in the hydrogen atom, the central-force field can be specified by the Coulomb potential V (x, t) = −Z(t)/x, where Z(t) is a parameter determined by the charges of the electron and the nucleus and the dielectric constant. Some researchers have considered a time-dependent dielectric constant [26][27][28][29][30] which is evidently responsible for the time dependence of the Coulomb potential. The problem of a single particle which has a time-dependent mass, moving around a center of time-dependent Coulomb force, may also be a typical example associated with the time-dependent Coulomb potential.…”

Section: Introductionmentioning

confidence: 99%

Exact wavefunctions for a time-dependent Coulomb potential

Maamache¹,

Saadi²,

Choi³

2008

J. Phys. A: Math. Theor.

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The one-dimensional Schrödinger equation associated with a time-dependent Coulomb potential is studied. The invariant operator method (Lewis and Riesenfeld) and unitary transformation approach are employed to derive quantum solutions of the system. We obtain an ordinary second-order differential equation whose analytical exact solution has been unknown. It is confirmed that the form of this equation is similar to the radial Schrödinger equation for the hydrogen atom in a (arbitrary) strong magnetic field. The qualitative properties for the eigenstates spectrum are described separately for the different values of the parameter ω0 appearing in the x2 term, x being the position, i.e., ω0 > 0, ω0 < 0 and ω0 = 0. For the ω0 = 0 case, the eigenvalue equation of invariant operator reduces to a solvable form and, consequently, we have provided exact eigenstates of the time-dependent Hamiltonian system.

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Section: Introductionmentioning

confidence: 99%

Exact wavefunctions for a time-dependent Coulomb potential

Maamache¹,

Saadi²,

Choi³

2008

J. Phys. A: Math. Theor.

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“…In Ta 2 O 5 , TDDB has been demonstrated for solid tantalum capacitors [15,16] and studied using MIM and MIS structures for DRAM applications [17][18][19]. Failures of tantalum capacitors at steady-state conditions can be considered as a result of field and temperature-accelerated degradation of the electrical strength of the Ta 2 O 5 dielectric, or as a time-dependent dielectric breakdown, TDDB [20].…”

Section: Effects Of the Pf Saturation On Time-to-failure In Tantalum mentioning

confidence: 99%

Poole–Frenkel Emission Saturation and Its Effects on Time-to-Failure in Ta-Ta₂O₅-MnO₂ Capacitors

Pan

Liu

2019

Advances in Materials Science and Engineering

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I-V characterization of Ta-Ta2O5-MnO2 capacitors was investigated at different temperatures, and Poole–Frenkel (PF) emission saturation was experimentally observed. Under the saturation voltage, the I-V curves at different temperature converged, and the temperature dependency was vanished. Above the saturation voltage, the leakage current was decreasing as the temperature increased. In order to evaluate the effects of saturation voltages (VS) on time-to-failure (TTF) of the capacitors, VS were first determined at +2°C and +25°C, then voltage accelerating tests were conducted at 85°C under 1.6 times of rated voltage. The distribution of VS and TTF of the samples were plotted and compared. It was shown that samples with lower saturation voltage failed earlier in the distribution of time-dependent dielectric breakdown. Comparing conventional methods for evaluating the quality of tantalum capacitors by measuring the leakage current at elevated temperature, the nondestructive measurement of saturation voltage at +2°C and +25°C may provide a novel and practicing approach tool to screening out capacitors with defected Ta2O5 layers.

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“…Early breakdown 29 or time-dependent dielectric breakdown 30 ͑TDDB͒ eventually occurs and is dependent on the magnitude of applied voltage and how close it is to the nominal breakdown voltage of 65 V, corresponding to an electric field of 4.6 MV cm −1 . The variation of time to breakdown versus applied voltage is shown in Fig.…”

Section: B Cvsmentioning

confidence: 99%

Reliability studies on Ta2O5 high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization

Sedghi

Davey

Mitrović

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Articles you may be interested inReliability of Al 2 O 3 -doped ZrO 2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors Time dependent dielectric breakdown of amorphous ZrAl x O y high-k dielectric used in dynamic random access memory metal-insulator-metal capacitor Electrical characteristics and conduction mechanisms of metal-insulator-metal capacitors with nanolaminated Al 2 O 3 -Hf O 2 dielectrics Appl. Phys. Lett. 93, 092909 (2008); 10.1063/1.2969399 High-temperature conduction behaviors of HfO 2 / TaN -based metal-insulator-metal capacitorsThe temperature dependence of leakage current for tantalum oxide metal-insulator-metal capacitors has been investigated over the temperature range 20-160°C. The leakage current shows an increase with temperature and the conduction mechanism at medium to high electric fields is in agreement with the modified Poole-Frenkel model. The activation energy of the dominant deep trapping center in the oxide is calculated using this model. Constant voltage and constant current stress have been applied to the devices and the effect of stress conditions on leakage current, breakdown voltage, and high frequency capacitance-voltage have been investigated. Early oxide breakdown or time-dependent dielectric breakdown was observed during constant voltage and constant current stress, in which the former is a function of stress time and applied voltage or current. There is an increase in leakage current with time during the constant voltage stress, presumably due to generation of positive defect states. This is also apparent from the decrease in voltage with time during constant current stress. Degradation of the oxides by constant current stress and its effect on the oxide leakage current ͑or stress induced leakage current͒ at various constant current values and stress times has also been investigated and is discussed in this article.

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Accelerated testing for time dependent dielectric breakdown (TDDB) evaluation of embedded DRAM capacitors using tantalum pentoxide

Cited by 14 publications

References 0 publications

Exact wavefunctions for a time-dependent Coulomb potential

Exact wavefunctions for a time-dependent Coulomb potential

Poole–Frenkel Emission Saturation and Its Effects on Time-to-Failure in Ta-Ta₂O₅-MnO₂ Capacitors

Reliability studies on Ta2O5 high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization

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Accelerated testing for time dependent dielectric breakdown (TDDB) evaluation of embedded DRAM capacitors using tantalum pentoxide

Cited by 14 publications

References 0 publications

Exact wavefunctions for a time-dependent Coulomb potential

Exact wavefunctions for a time-dependent Coulomb potential

Poole–Frenkel Emission Saturation and Its Effects on Time-to-Failure in Ta-Ta2O5-MnO2 Capacitors

Reliability studies on Ta2O5 high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization

Contact Info

Product

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Poole–Frenkel Emission Saturation and Its Effects on Time-to-Failure in Ta-Ta₂O₅-MnO₂ Capacitors