2011
DOI: 10.1116/1.3532823
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Reliability studies on Ta2O5 high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization

Abstract: Articles you may be interested inReliability of Al 2 O 3 -doped ZrO 2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors Time dependent dielectric breakdown of amorphous ZrAl x O y high-k dielectric used in dynamic random access memory metal-insulator-metal capacitor Electrical characteristics and conduction mechanisms of metal-insulator-metal capacitors with nanolaminated Al 2 O 3 -Hf O 2 dielectrics Appl. Phys. Lett. 93, 092909 (2008); 10.1063/1.2969399 High-temperature conducti… Show more

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Cited by 11 publications
(8 citation statements)
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“…Note that r is a coefficient ranging between 1 and 2 related to an electron compensation effect among trapping sites. 38 device. Furthermore, the trap depth (ψ t ) of ∼0.46 eV for the Pt/ZnO/Pt device at the HRS could be extrapolated from an intercept of ln(J/E) as the function of temperatures as shown in Figure 4b, namely, an Arrhenius plot, which is consistent with the value reported in the literature.…”
Section: Resultsmentioning
confidence: 98%
“…Note that r is a coefficient ranging between 1 and 2 related to an electron compensation effect among trapping sites. 38 device. Furthermore, the trap depth (ψ t ) of ∼0.46 eV for the Pt/ZnO/Pt device at the HRS could be extrapolated from an intercept of ln(J/E) as the function of temperatures as shown in Figure 4b, namely, an Arrhenius plot, which is consistent with the value reported in the literature.…”
Section: Resultsmentioning
confidence: 98%
“…Studies on temperature and electrical stress dependency on reliability of high-k materials are vital for microelectronics applications. However, these reliability studies on anodic oxide MIM capacitor are rarely found [2].…”
Section: Imentioning
confidence: 99%
“…Anodic oxidation or anodization is an attractive and reliable high-k oxide growth technology for high quality metal insulator-metal (MIM) capacitors which has been reported by many authors recently [1][2][3][4]. This inexpensive anodization process has many advantages such as low defect profile, improved ionic polarization and low leakage which are main quality measures of dielectric materials to meet the challenges of International Technology Roadmap for Semiconductors (ITRS) [5].…”
Section: Imentioning
confidence: 99%
“…The amorphous tantalum oxide (ATO) formed electrochemically is the dielectric layer in these capacitors [1][2][3][4][5][6][7][8]. The degradation of ATO's dielectric properties upon prolonged exposure to high electric field stress has been the focus of a large number of prior investigations [1,3,5,[9][10][11][12][13][14][15][16][17]. The conventional understanding is that high electric fields promote the growth of crystalline tantalum pentoxide around crystalline nuclei that are typically located at the metal-oxide interface.…”
Section: Introductionmentioning
confidence: 99%