2004
DOI: 10.2298/fuee0401081s
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Access latency reduction in contemporary dram memories

Abstract: Performances of DRAM memories are characterized by memory latency and bandwidth. Contemporary DRAM memories more successfully satisfy demands for higher bandwidth than lower latency. In this paper solutions, which may reduce latency of these memories, are investigated. These solutions are two new controller policies called 'Write-miss Only

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Cited by 6 publications
(8 citation statements)
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“…Figure 3 illustrates one rank interleaving address mapping. Several Studies have examined more involved address mappings with the objective of reducing SDRAM row conflicts [3,16,18,19]. Wei-fen Lin [18] pointed out that address mappings affect performance significantly and proposed an address mapping scheme that XORs the device and bank index with the lower bits of the row address.…”
Section: Related Workmentioning
confidence: 99%
“…Figure 3 illustrates one rank interleaving address mapping. Several Studies have examined more involved address mappings with the objective of reducing SDRAM row conflicts [3,16,18,19]. Wei-fen Lin [18] pointed out that address mappings affect performance significantly and proposed an address mapping scheme that XORs the device and bank index with the lower bits of the row address.…”
Section: Related Workmentioning
confidence: 99%
“…When using the second policy, a row is being closed after every access, so the latency is always the samethe sum Tra+Tca. The Open Row Policy gives good results if there is a good memory access locality, and [5], [6] we have already considered various possibilities of obtaining hybrid policies, which use the advantages of both policies. The goal is to achieve a policy more efficient than the both basic policies, and in that way, to decrease the DRAM latency.…”
Section: Basic Ideamentioning
confidence: 99%
“…This is the basis of papers in which address remappings are considered, which transform memory addresses into banks, rows and columns that optimize DRAM performances for certain memory access patterns [4], [5].…”
mentioning
confidence: 99%
“…This makes that we can influence DRAM memory performances (latency) by controlling the data placement into banks and rows. This is the basis of papers in which address remappings are considered, which transform memory addresses into banks, rows and columns that optimize DRAM performances for certain memory access patterns [3], [4].…”
Section: Introductionmentioning
confidence: 99%
“…Open Row Policy gives good results if there is a good memory access locality, and Close Row Autoprecharge Policy gives good results if DRAM accesses have mostly random character. In some of our previous papers [4], [5] we have already considered various possibilities for obtaining hybrid policies, which use the advantages of both policies. The goal is to achieve a policy more efficient than both the Open Row and Close Row Autoprecharge Policy, and in that way, to decrease the DRAM latency.…”
Section: Introductionmentioning
confidence: 99%