Accurate Calorimetric Switching Loss Measurement for 900 V 10 m $\Omega$ SiC mosfets

Anderson, Jon Azurza; Gammeter, Christoph; Schrittwieser, Lukas; Kolar, Johann W.

doi:10.1109/tpel.2017.2701558

Cited by 60 publications

(11 citation statements)

References 9 publications

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“…The losses in (3) are equal to the ZCS losses, and are the minimum hard-switching losses where the V −I overlap losses [23] don't exist due to zero load current. These minimum losses match very precisely with the measurements presented in Section V and with reported results in prior literature [31,32].…”

Section: Sisupporting

confidence: 91%

“…(mainly due to the dependency of E c on N D , where lowering N D , which is required for blocking higher voltages, cf., (31), also leads to a reduction in E c ) [23,62,63] and coincides with the device survey performed in Section II. Both Si and SiC devices are variations of vertical structures, and although the device structure may vary, for instance, by including field plates to shape the electric field profile [64], this derivation yields a valid insight for both of these technology classes.…”

supporting

confidence: 87%

“…the switching losses are always larger than the conduction losses [31], for the 1200 V devices, a larger brass block is needed [40] and correspondingly higher losses have to be generated leading to a slightly higher junction temperature). The employed gate drivers are the 1EDI60I12AF from Infineon, and all of the measurements were taken with 0 Ω (both turnon and turn-off) external gate resistances.…”

Section: Adding Measured Switching Losses To the X-fom Theorymentioning

confidence: 99%

See 2 more Smart Citations

New Figure-of-Merit Combining Semiconductor and Multi-Level Converter Properties

Anderson

Zulauf

Kolar

et al. 2020

IEEE Open J. Power Electron.

Self Cite

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Figures-of-merit (FOMs) are widely-used to compare power semiconductor materials and devices and to motivate research and development of new technology nodes. These material-and device-specific FOMs, however, fail to directly translate into quantifiable performance in a specific power electronics application. Here, we combine device performance with specific bridge-leg topologies to propose the extended FOM, or X-FOM, a figure-of-merit that quantifies bridge-leg performance in multi-level (ML) topologies and supports the quantitative comparison and optimization of topologies and power devices. To arrive at the proposed X-FOM, we revisit the fundamental scaling laws of the on-state resistance and output capacitance of power semiconductors to first propose a revised device-level semiconductor Figure-of-Merit (D-FOM). The D-FOM is then generalized to a multi-level topology with an arbitrary number of levels, output power, and input voltage, resulting in the X-FOM that quantitatively compares hard-switched semiconductor stage losses and filter stage requirements across different bridgeleg structures and numbers of levels, identifies the maximum achievable efficiency of the semiconductor stage, and determines the loss-optimal combination of semiconductor die area and switching frequency. To validate the new X-FOM and showcase its utility, we perform a case study on candidate bridge-leg structures for a three-phase 10 kW photovoltaic (PV) inverter, with the X-FOM showing that (a) the minimum hard-switching losses are an accurate approximation to predict the theoretically maximum achievable efficiency and relative performance between bridge-legs and (b) the 3-level bridge-leg outperforms the 2-level configuration, despite utilizing a SiC MOSFET with a lower D-FOM than in the 2-level case.

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Section: Sisupporting

confidence: 91%

supporting

confidence: 87%

Section: Adding Measured Switching Losses To the X-fom Theorymentioning

confidence: 99%

See 1 more Smart Citation

New Figure-of-Merit Combining Semiconductor and Multi-Level Converter Properties

Anderson

Zulauf

Kolar

et al. 2020

IEEE Open J. Power Electron.

Self Cite

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show abstract

“…Efforts are made to minimize the potential errors resulted from the DPT according to [14]. The deskew of the voltage and current probes is properly conducted, which is supported by the good matching (E on discrepancy e = 6%, E off discrepancy e = 1.8%) between the LVprobe and HVprobe measurement results (cyan and blue circles) in Fig.…”

Section: Simulation and Experiments Verificationmentioning

confidence: 93%

An Analytical Switching Loss Model for a SiC MOSFET and Schottky Diode Half-Bridge Based on Nonlinear Differential Equations

Hu¹,

Biela²

2021

2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe)

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An accurate analytical switching loss model for a SiC MOSFET and Schottky diode half-bridge for a wide operating range is proposed in this paper, which is based on nonlinear differential circuit equations including parasitics. In the model, nonlinear device characteristics are used, including the dynamic gatedrain capacitance and the transfer characteristics measured under real switching conditions. With the proposed model, the accuracy improvement by using measured characteristics instead of device data sheet information is analyzed. In addition, the impact of making different common assumptions/simplifications on the accuracy of switching loss models is evaluated.

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“…In contrast to the calorimetric method, the purely electrical approach to loss measurement using a DPT circuit allows to separately compute the switching losses using current and voltage waveforms, which are obtained from an oscilloscope, without the need of an external post‐processing system [31–33].…”

Section: Switching Losses Estimation In Power Mosfetmentioning

confidence: 99%

Switching losses prediction methods oriented to power MOSFETs – a review

Paula

Tavares

Soares

et al. 2020

IET power electron.

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Accurate Calorimetric Switching Loss Measurement for 900 V 10 m $\Omega$ SiC mosfets

Cited by 60 publications

References 9 publications

New Figure-of-Merit Combining Semiconductor and Multi-Level Converter Properties

New Figure-of-Merit Combining Semiconductor and Multi-Level Converter Properties

An Analytical Switching Loss Model for a SiC MOSFET and Schottky Diode Half-Bridge Based on Nonlinear Differential Equations

Switching losses prediction methods oriented to power MOSFETs – a review

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