An accurate analytical switching loss model for a SiC MOSFET and Schottky diode half-bridge for a wide operating range is proposed in this paper, which is based on nonlinear differential circuit equations including parasitics. In the model, nonlinear device characteristics are used, including the dynamic gatedrain capacitance and the transfer characteristics measured under real switching conditions. With the proposed model, the accuracy improvement by using measured characteristics instead of device data sheet information is analyzed. In addition, the impact of making different common assumptions/simplifications on the accuracy of switching loss models is evaluated.

Advanced high voltage (3.3-15kV) SiC MOSFETs have been developed for future medium voltage converters over the past decade due to their superior performance. In order to better understand the operation limits and potential of these devices, this paper evaluates the I max -f sw -dv/dt trade-off (maximal currenthandling capability at a specific switching frequency and at a defined switching speed) for high voltage SiC MOSFETs based on a proposed linearized analytical switching loss model. There, high voltage SiC MOSFETs manufactured by Cree combined with data from literature for scaling are used as reference.

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