Accurate Characteristic Impedance Measurement on Silicon

Williams, Dylan F.; Arz, Uwe; Grabinski, H.

doi:10.1109/arftg.1998.327296

Cited by 40 publications

(47 citation statements)

References 10 publications

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“…In either situation, it is then possible to implement the calibration-comparison method by inserting an impedance transformer to map the reference impedance of the measurement into the reference impedance Z 0 of the multiple, redundant line standards and the following the procedure given in [7][8][9]. Investigations continue to determine if following this approach results in a more accurate characteristic impedance determination.…”

Section: Resultsmentioning

confidence: 97%

“…Marks and Williams attribute this difficulty to the electrical discontinuity present at the transmission-line connection and suggest a multiline calibration-comparison method to estimate the characteristic impedance [6,7]. They propose an equivalent-circuit model for the discontinuity that consist of a lossy shunt contactpad with admittance Y followed by an ideal impedance transformer in order to transform the Z 0 of the transmission line to match the impedance of the reference lines used during calibration [8]. Their method, however, encounters difficulties in the presence of parasitic inductance in the transition between the probe tip and the transmission line [9].…”

Section: Introductionmentioning

confidence: 99%

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On determining the characteristic impedance of low-loss transmission lines

Post¹

2005

Microw. Opt. Technol. Lett.

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Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

On determining the characteristic impedance of low-loss transmission lines

Post¹

2005

Microw. Opt. Technol. Lett.

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“…The measurement of the through adapters gives two equations, as shown in Eqs. (5) and (6). Therefore, we obtain…”

Section: (B) Symmetric Model For a Single Adaptermentioning

confidence: 92%

“…This approach catches the electrical discontinuity at the connection between pad and transmission lines, but not the series impedance of the vias. In [6], the contact pads (adapters) are modelled as a lossy shunt admittance Y followed by an impedance transformer. In the measurements of devices like bipolar transistors [7] and MOSFETs [8], a three-step method and an improved three-step method are used to de-embed structures such as open, through, short 1, and short 2, respectively.…”

Section: Introductionmentioning

confidence: 99%

De‐embedding techniques for embedded microstrips

Song

Ling²,

Blood

et al. 2004

Micro & Optical Tech Letters

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summary, the TE 01 and TE 03 modes are working modes for temperatures lower than 40°C. The TE 01 mode is the working mode up to 40°C. Then, the lossy load can induce a multimodal character for the waveguide, even for a frequency close to 2.45 GHz.Therefore, several centimeters after the discontinuity between the source and the waveguide, the applicator will select the mode(s) which offer(s) the lowest attenuation (according to temperatures TE 01 and TE 03 ). For the structure studied, we never observe the TE 02 , TE 03 , and TE 04 modes. However, these modes will participate in heating at the beginning of the application because all modes are excited due to the dielectric loss of the water pipe. So, during the microwave heating of the rod, we can consider several modes in order to forecast the electric-field distribution. Thus, knowledge of electromagnetic behavior of the loaded waveguide allows us to forecast the electric-field radial distribution. Then, with a good choice of pipe diameter, it is possible to suggest a structure which will provide uniform heating over the available section of the cylindrical load. According to these results, the effect of dielectric losses upon the mode-propagation parameters is a consequence. Obviously, it is not possible to deduce the behavior of lossy structures from the data of lossless ones. CONCLUSIONA powerful computer-aided-solution procedure has been designed for the study of high-power industrial applicators. Modes established for lossless structures have been extended to high-loss systems and limits of classical perturbation approaches can be completely avoided. Taking into account dielectric losses is a key goal for the design of optimized microwave industrial applicators for microwave heating of fluids within pipes. Moreover, dielectric tuning due to thermal dependency of dielectric properties must be taken into account. It has been shown that our approach provides an accurate means of trapping modes for lossy loaded cylindrical applicators.The information made available by this technique is a valuable contribution to a more precise understanding of electromagnetic distribution within the applicator. Moreover, our approach should enable the predictive control and design of optimized travellingwave applicators. According this study, a viable alternative to the trial and error methods currently used to design microwave applicators for industrial heating applications has been proposed. In order to characterize on-wafer circuitry for any device, it is necessary to gain test access to that circuitry. This is generally accomplished by placing test access ports (pads, vias, interconnects, buffers, and so on) on the silicon and the circuit to be tested. For most low frequencies, techniques have been developed which ensure that the effect of the test access ports on the measurement is negligible. However, for high-frequency (Ͼ1 GHz) parametric measurements, it is generally not possible to gain access to the circuit under test without significantly impacting the measurement be...

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“…3 (a) center). An alternative treatment of the error boxes measured by the calibration comparison method was presented in [14], [15]. In this approach, any arbitrary large shunt contact pad capacitance and conductance can be accounted for ( Fig.…”

Section: B Abcd Matrix Based Methodsmentioning

confidence: 99%

Highly accurate frequency/time domain characterization of transmission lines and passives for SiP applications up to 65 GHz

Wojnowski

Engl

Weigel

2007

2007 69th ARFTG Conference

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Frequency (GHz)Fig. 1. The extracted inductance of a spiral inductor as a function of reference impedance. • No ren orm. • l ref = 20 ... Z = Z -5% ref 0 • Z = Z + 5% ref 0 Zref = Re 2 0 2.5 4.5 I 4 cThe only method that does not need the characteristics of the reflection calibration standards is the Thru-Reflect-Line (TRL) method [6], [7]. However, the reference impedance in the TRL calibration corresponds to the characteristic impedance of the lines used in the calibration. This in general complex impedance is usually not known. In Fig. 1 the influence of the reference impedance on the extracted inductance of a single layer spiral inductor is shown. If we use the Y 11 -based definition of the inductance L = Im(Yii 1 ) / w we get(1 -8 11 )(1 + 8 22) + 8 12821where 8 i j are the S-parameters referenced to Zo impedance. This means that the accuracy of the inductance determination is directly proportional to the impedance accuracy. Thus, the accurate determination of the complex characteristic impedance is of great importance, since this value determines the accuracy of the RLCG-parameter de-embedding. Moreover, Abstract-Accurate determination of the characteristic impedance determines the accuracy of the characterization of transmission lines and passive devices. In this paper, we present a novel, time-domain based procedure for the complex characteristic impedance determination. The method is insensitive to changes in the reference plane and the parasitic shunt admittance at the probe tips. For highly accurate passives characterization, a modification of the Thru-Refleet-Line (TRL) calibration algorithm is proposed. It enables the use of the TRL method to deembed components having the ports on different metallization levels. Additionally, a comprehensive overview and evaluation of both frequency and time-domain methods for characteristic impedance determination is included for completeness. We present measurement results of transmission lines and spiral inductors fabricated in MCM-D technology on low-and highresistivity substrates up to 65 GHz.

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Accurate Characteristic Impedance Measurement on Silicon

Cited by 40 publications

References 10 publications

On determining the characteristic impedance of low-loss transmission lines

On determining the characteristic impedance of low-loss transmission lines

De‐embedding techniques for embedded microstrips

Highly accurate frequency/time domain characterization of transmission lines and passives for SiP applications up to 65 GHz

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