Active terahertz device based on optically controlled organometal halide perovskite

Zhang, Bo; Lv, Longfeng; He, Ting; Chen, Tianji; Zang, Mengdi; Zhong, L.; Wang, Xinke; Shen, Jingling; Hou, Yanbing

doi:10.1063/1.4930164

Cited by 47 publications

(25 citation statements)

References 31 publications

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“…We took note that the measurement of the THz modulation with hybrid perovskite/Si devices at the wavelength of 532 nm has never been reported even with the fact that green light is the most abundant spectral component in sunlight. So, in contrast to previous research on perovskite-based modulators with weak THz pulse and 400-nm optical pump22, we chose 532 nm of wavelength as optical pump and modulated intense THz pulse, which will be the realistic tool to characterize perovskite materials as solar devices.…”

Section: Resultsmentioning

confidence: 99%

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All-optical THz wave switching based on CH3NH3PbI3 perovskites

Lee

Kang

Son

et al. 2016

Sci Rep

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Hybrid structures of silicon with organic–inorganic perovskites are proposed for optically controllable switching of terahertz (THz) waves over a broad spectral range from 0.2 to 2THz. A 532-nm external laser was utilized to generate photoexcited free carriers at the devices and consequentially to control the terahertz amplitude modulation, obtaining a depth of up to 68% at a laser irradiance of 1.5 W/cm2. In addition, we compared the performances from three types of perovskite devices fabricated via different solution processing methods and suggested a stable and highly efficient THz switch based on a one-step processing. By this we demonstrated the possibility of perovskites as THz wave switching devices in addition to photovoltaics.

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Section: Resultsmentioning

confidence: 99%

“…One recent report has shown an optically controlled THz amplitude modulator based on the hybrid structure of Si with a perovskite film fabricated via two-step solution processing22. However, the instability of perovskites under ambient conditions has remained problematic in practical applications23.…”

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confidence: 99%

All-optical THz wave switching based on CH3NH3PbI3 perovskites

Lee

Kang

Son

et al. 2016

Sci Rep

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“…Many other materials showing dynamic THz responses applicable to active THz modulation also exist, such as NbO 2 , [211] InSb, [212,213] QWs, [214] titanium oxides, [215] orthoferrites, [216][217][218] rare-earth nickelates, [219][220][221] manganites, [222][223][224] topological insulators, [225][226][227] multiferroics, [228] molecular crystals, [229,230] medicines, [231] polymers, [232][233][234][235][236][237][238] and halide perovskites, [239][240][241][242][243][244][245][246] to name but a few. Considering the diversity of the material properties and the control mechanisms, plasmonic hybridization may bring about new possibilities for a wide variety of active THz devices.…”

Section: Potential Candidatesmentioning

confidence: 99%

Dynamic Terahertz Plasmonics Enabled by Phase‐Change Materials

Jeong

Bahk

Kim

2019

Advanced Optical Materials

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Phase‐change phenomena have been an attractive research theme for decades due to the dynamic transition of material properties providing extraordinary capabilities for versatile optical device applications. Even at the terahertz (THz) frequency regime, phase‐change materials (PCMs) promote the development of dynamic devices, especially when combined with a plasmonic approach delivering strong field enhancement and localization. According to the design of plasmonic metamaterials or hybrid composites, PCMs can actively modulate the electromagnetic properties of THz waves through thermal, electrical, and optical means. In turn, THz waves can affect the PCM properties in the nonlinear regime due to the intense field strength enhancement by plasmonic structures. Here, a few types of PCMs demonstrating promising potential in THz plasmonic applications are introduced. Starting from the best‐known transition metal oxide, vanadium dioxide (VO2), which possesses an insulator‐to‐metal phase transition near room temperature, superconductors, chalcogenides, ferroelectrics, liquid crystals, and liquid metals are covered along with their phase‐change properties and the control mechanisms infused with THz plasmonic applications. The corresponding recent progress presenting how PCMs combined with plasmonic structures can demonstrate effective THz modulation is reviewed. This general overview may provide a better understanding of dynamic THz plasmonics and new ideas for future THz technology.

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“…THz waves can be modulated by optically pumping silicon to form a temporary region with either high absorption or strong reflection [9]. As a result, Okada et al [10] and Xie et al [11] proposed silicon-based spatial THz modulators (STM), while Zhang et al [12] and Cheng et al [13] reported optically controlled reconfigurable quasi-optical THz devices. Optically tunable THz modulators enable broadband modulation with considerable modulation depth.…”

Section: Introductionmentioning

confidence: 99%

An Optically Tunable THz Modulator Based on Nanostructures of Silicon Substrates

Liu

Wei

et al. 2020

Sensors

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Nanostructures can induce light multireflection, enabling strong light absorption and efficient photocarrier generation. In this work, silicon nanostructures, including nanocylinders, nanotips, and nanoholes, were proposed as all-optical broadband THz modulators. The modulation properties of these modulators were simulated and compared with finite element method calculations. It is interesting to note that the light reflectance values from all nanostructure were greatly suppressed, showing values of 26.22%, 21.04%, and 0.63% for nanocylinder, nanohole, and nanotip structures, respectively, at 2 THz. The calculated results show that under 808 nm illumination light, the best modulation performance is achieved in the nanotip modulator, which displays a modulation depth of 91.63% with a pumping power of 60 mW/mm2 at 2 THz. However, under shorter illumination wavelengths, such as 532 nm, the modulation performance for all modulators deteriorates and the best performance is found with the nanohole-based modulator rather than the nanotip-based one. To further clarify the effects of the nanostructure and wavelength on the THz modulation, a graded index layer model was established and the simulation results were explained. This work may provide a further theoretical guide for the design of optically tunable broadband THz modulators.

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Active terahertz device based on optically controlled organometal halide perovskite

Cited by 47 publications

References 31 publications

All-optical THz wave switching based on CH3NH3PbI3 perovskites

All-optical THz wave switching based on CH3NH3PbI3 perovskites

Dynamic Terahertz Plasmonics Enabled by Phase‐Change Materials

An Optically Tunable THz Modulator Based on Nanostructures of Silicon Substrates

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