Advanced AlGaN/GaN Resonant Tunneling Diode on Silicon Substrate for Negligible Scattering and Polarization effects

Chowdhury, Subhra; Santara, Anirban; Mukhopadhyay, Partha; Biswas, Dhrubes

doi:10.1007/978-3-319-03002-9_72

Cited by 2 publications

(3 citation statements)

References 9 publications

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“…The proposed GaN/AlGaN RTDs are featured of the same order current as the result in [10], [12] and [15] at much lower peak and valley voltages. Moreover, the peak and valley currents and all feature voltages increase nonlinearly with  as illustrated in Figure IV }, which is enough to satisfy the PVCR requirement for low voltage and low power loss MVL and supercomputer design applications.…”

Section: Verifications and Discussionsupporting

confidence: 52%

“…As a result, the GaN/AlGaN RTD with the crystal plane { 1 0 2 2 } as the initial crystal plane of substrate commence to appear practical NDR characteristic for low voltage and low power loss MVL application, which might be approximately defined as critical RT crystal plane. Even the NDR characteristic of a-plane RTD is observed at less than half peak and valley voltages of the result in [10], [12] and [15]. Besides, the GaN/AlGaN RTD with the crystal plane { 1 0 8 8 } as the initial crystal plane of substrate appears the maximum PVCR at about 34.09.…”

Section: Advances In Computer Science Research Volume 58mentioning

confidence: 95%

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A Restrain Method of Polarization Effect in GaN/AlGaN RTD

Zhang¹,

Hao²,

Lin³

et al. 2016

Proceedings of 2016 International Conference on Modeling, Simulation and Optimization Technologies and Applications (MSOTA2016)

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Abstract-Polarization effects and polarization charges on the interfaces between GaN and AlGaN in GaN/AlGaN RTD on cplane GaN substrate destroy its RT conditions. To pave the way for electron transportation through GaN/AlGaN RTD in the mode of resonant tunneling, the influence from polarization effects was analyzed and a way to restrain it on the NDR characteristic was found. Since the polarization field is along the negative C crystal orientation, while the external applied field is orthogonal to the original crystal plane, the effective polarization field was modeled and device simulations of the polarization effects in GaN/AlGaN RTDs with different initial crystal planes of GaN substrates were carried out. The results indicate that to select an initial crystal plane of GaN substrate by increasing the c-plane drift angle from 0 to /2 is very helpful to recover and enhance the RT conditions since it is capable of reducing effective polarization field, forming RT quantum state energy levels on both sides of potential barriers and improving electron transmission. Therefore, the crystal planes between { 1 0 2 2 } and a-plane are optional as the initial crystal plane of GaN substrate for related power levels of related practical applications.

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Section: Verifications and Discussionsupporting

confidence: 52%

Section: Advances In Computer Science Research Volume 58mentioning

confidence: 95%

A Restrain Method of Polarization Effect in GaN/AlGaN RTD

Zhang¹,

Hao²,

Lin³

et al. 2016

Proceedings of 2016 International Conference on Modeling, Simulation and Optimization Technologies and Applications (MSOTA2016)

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“…The findings reveal a vanished leakage current density using suitable doping, which causes, in turn, an undoped InAlN barrier which increases its conduction band shape [15]. For the same sheet carrier concentration based on the Fujitsu model [16], the sheet carrier and Hall mobility concentrations were 1 × 10 13 cm −2 and 1300 cm 2 V −1 s −1 , respectively. The heterojunction presents a sheet charge density of 1.85 × 10 13 cm 2 .…”

Section: Device Structurementioning

confidence: 99%

Improved performance HEMT device with backup bulk for LNA application

2023

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In this study, a 30 nm gate length double-gate InAlN/GaN on 4h-SiC substrate high-electron-mobility transistor is proposed. Different electrical characteristics such as DC, AC, capacity and noise analysis was performed through TCAD device simulations. The proposed device exhibited maximum drain current of 2.15 A/mm, transconductance of 1308 mS/mm, (350/ 610) GHz of FT/FMAX and maximum noise figure of NFMax=9.5 dB at 1 THz. Thus, the low noise high electron mobility transistor (LNA-HEMT) amplifier has been designed considering main characteristics of power with new structure, in terms of temperature and low noise figure effect. Adopting the backup bulk in the optimization procedure the proposed device obtained an outstanding performance with appropriate low power consumption for GEO satellite application

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Advanced AlGaN/GaN Resonant Tunneling Diode on Silicon Substrate for Negligible Scattering and Polarization effects

Cited by 2 publications

References 9 publications

A Restrain Method of Polarization Effect in GaN/AlGaN RTD

A Restrain Method of Polarization Effect in GaN/AlGaN RTD

Improved performance HEMT device with backup bulk for LNA application

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