Advanced Terahertz Sensing and Imaging Systems Based on Integrated III-V Interband Tunneling Devices

Liu, Lei; Rahman, Seikh Mohammad Habibur; Jiang, Zhou; Li, Wenjun; Fay, Patrick

doi:10.1109/jproc.2016.2636245

Cited by 25 publications

(16 citation statements)

References 80 publications

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“…Then, the THz beam power given to the EMSM junction is calculated to be ~1.25 × 10 −8 W. With this THz beam power, the detector responsivity is estimated to be ~161 V/W at V b = 0 V and it increases to ~2,169 V/W at V b = 2 V. The responsivities of our EMSM detector are considered to be pretty high, especially if considering that no additional antenna and signal amplifier were involved. Just as comparison, the typical responsivities of recently-reported Schottky diode 32 and semiconductor interband tunneling diode 33 THz detectors with antenna structures incorporated are ~500 V/W and ~1,150 V/W, respectively, as described in Table 1 . The recent THz detectors based on MOSFET 34 and GFET 35 with antenna structures, are reported to have responsivities of ~5,000 V/W and ~74 V/W each, also shown in Table 1 .…”

Section: Resultsmentioning

confidence: 99%

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction

Jeon¹,

Jung

Jin

et al. 2017

Sci Rep

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Terahertz (THz) detectors have been extensively studied for various applications such as security, wireless communication, and medical imaging. In case of metal-insulator-metal (MIM) tunnel junction THz detector, a small junction area is desirable because the detector response time can be shortened by reducing it. An edge metal-semiconductor-metal (EMSM) junction has been developed with a small junction area controlled precisely by the thicknesses of metal and semiconductor films. The voltage response of the EMSM THz detector shows the clear dependence on the polarization angle of incident THz wave and the responsivity is found to be very high (~2,169 V/W) at 0.4 THz without any antenna and signal amplifier. The EMSM junction structure can be a new and efficient way of fabricating the nonlinear device THz detector with high cut-off frequency relying on extremely small junction area.

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Section: Resultsmentioning

confidence: 99%

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction

Jeon¹,

Jung

Jin

et al. 2017

Sci Rep

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“…In particular, room-temperature operation is desired. Besides other semiconductor-based detector technologies (e.g., uncooled microbolometers [1]- [5], Schottky-diode-based rectifiers (SBD) [6]- [8], Sb-heterojunction backward diodes [9]- [11], resonanttunneling diodes [12], [13], broken-symmetry nano-channel detectors [14], or thermoelectric detectors [15]), THz detection with antenna-coupled field-effect transistors (TeraFETs) has emerged as a powerful concept, which meets the aforementioned requirements [16]- [22]. The underlying detection principle is rectification by resistive self-mixing in the two-dimensional electron gas (2DEG) in the transistor's channel, modified by the occurrence of charge density (plasma) waves at frequencies in the THz range [23], [24].…”

Section: Introductionmentioning

confidence: 99%

A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna

Bauer

Rämer

Chevtchenko

et al. 2019

IEEE Trans. THz Sci. Technol.

107

102

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“…Terahertz waves generally refer to electromagnetic waves with a frequency of 0.1–10 THz. Terahertz technology has broad applications in terahertz communication, spectroscopy, detecting, sensing, and imaging [ 1 , 2 , 3 , 4 ]. THz metamaterial absorbers (MAs) have aroused increasing attention since Landy et al proposed a perfect MA in 2008 [ 5 ].…”

Section: Introductionmentioning

confidence: 99%

Frequency-Reconfigurable Wide-Angle Terahertz Absorbers Using Single- and Double-Layer Decussate Graphene Ribbon Arrays

Zeng

Zhang

et al. 2018

Nanomaterials

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We propose and numerically demonstrate two novel terahertz absorbers made up of periodic single- and double-layer decussate graphene ribbon arrays. The simulated results show that the proposed absorbers have narrowband near-unity terahertz absorption with ultra-wide frequency reconfiguration and angular stability. By tuning the Fermi level of graphene ribbons, the over 90% absorbance peak frequency of the absorber with single-layer graphene structure can be flexibly adjusted from 6.85 to 9.85 THz for both the transverse magnetic (TM) and transverse electric (TE) polarizations. This absorber with single-layer graphene demonstrates excellent angular stability with the absorbance peaks of the reconfigurable absorption bands remaining over 99.8% in a wide angle of incidence ranging from 0 to 70°. The tuning frequency can be significantly enhanced by using the absorber with double-layer graphene structure from 5.50 to 11.28 THz and 5.62 to 10.65 THz, approaching two octaves under TM and TE polarizations, respectively. The absorbance peaks of the reconfigurable absorption band of this absorber for both polarizations maintain over 70%, even at a large angle of incidence up to 70°. Furthermore, an analytical fitting model is also proposed to accurately predict the absorbance peak frequencies for this variety of absorbers. Benefitting from these attractive properties, the proposed absorber may have great potential applications in tunable terahertz trapping, detecting, sensing, and various terahertz optoelectronic devices.

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Advanced Terahertz Sensing and Imaging Systems Based on Integrated III-V Interband Tunneling Devices

Cited by 25 publications

References 80 publications

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction

A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna

Frequency-Reconfigurable Wide-Angle Terahertz Absorbers Using Single- and Double-Layer Decussate Graphene Ribbon Arrays

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