Advances in Halide Perovskite Memristor from Lead-Based to Lead-Free Materials

Abstract

Memristors have attracted considerable attention as one of the four basic circuit elements besides resistors, capacitors, and inductors. Especially, the nonvolatile memory devices have become a promising candidate for the new-generation information storage, due to their excellent write, read, and erase rates, in addition to the low-energy consumption, multistate storage, and high scalability. Among them, halide perovskite (HP) memristors have great potential to achieve low-cost practical information storage and computing. However, the usual lead-based HP memristors face serious problems of high toxicity and low stability. To alleviate the above issues, great effort has been devoted to develop lead-free HP memristors. Here, we have summarized and discussed the advances in HP memristors from lead-based to lead-free materials including memristive properties, stability, neural network applications, and memristive mechanism. Finally, the challenges and prospects of lead-free HP memristors have been discussed.

Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

“…Due to their exotic optical absorption, outstanding charge-transporting properties, and ultra-flexibility, HPs are believed as emerging contenders for next-generation electronic devices. Here, we focus on recent advances about HPbased flexible memristors [25,48,118,[123][124][125][126].…”

“…It should be noted that the above perovskites contain toxic Pb element, which may restrict their further practical applications. To this regard, numerous research efforts have been devoted to developing lead-free perovskites for memristor devices [25,58,122]. As shown in Fig.…”

“…To date, a variety of functional materials have been applied for memristor applications [25][26][27][28][29], including organic materials [30][31][32], inorganic compounds [33][34][35] and organic-inorganic hybrid materials [36][37][38]. In this review, we pay attention to a special class of materials: flexible crystalline materials (CMs).…”

Light‐Induced Synaptic Effects Controlled by Incorporation of Charge‐Trapping Layer into Hybrid Perovskite Memristor

“…[ 7 ] Particularly, the interplay between memristive properties and light‐induced synaptic plasticity still remains to be thoroughly investigated due to its remarkable potential in the field of neuromorphic computing. Lead iodide perovskites or, more generally hybrid organic‐inorganic perovskites (HOIPs) seem to be materials of choice for these applications: they show very well‐characterized memristive properties [ 2d,8 ] and their leading position in solar energy conversion is unquestioned. [ 9 ] The exploration of HOIPs in photomemristive devices requires appropriate interface engineering in order to activate processes which are detrimental for solar cells, but highly desired for memristive devices (e.g., extended hysteresis, charge trapping, charge carrier recombination).…”

Halide Perovskites for Resistive Switching Memory

“…In addition, the unique photoelectronic and mechanical properties, as well as the facile fabrication process of halide perovskite films, are beneficial for the investigation of RRAMs. Although research on halide perovskite RRAMs has developed rapidly and recent progress has been covered by excellent review articles of all kinds, − much attention should focus on the development challenges for potential applications.…”