Advances in Silicon‐Nanoelectronics, Nanostructures and High‐Efficiency Si‐Photovoltaics

Hiller, Daniel; Duffy, Ray; Strehle, Steffen; Stradins, Pauls

doi:10.1002/pssa.202000023

Cited by 4 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although Si nanostructures have many potential applications in nanoelectronics, 1–3 the dielectric behaviour of Si clusters has not been sufficiently investigated and understood. In an older work, there was an indication that in Si N clusters with N = 60–120 atoms, the dielectric constant is lowered as a consequence of the quantum confinement compared to the bulk material.…”

Section: Introductionmentioning

confidence: 99%

Scaling of the permanent electric dipole moment in isolated silicon clusters with near-spherical shape

Rivic

Lehr

2023

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Scaling of the permanent electric dipole moment in isolated silicon clusters with near-spherical shape

Rivic

Lehr

2023

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

Silicon Suboxides as Driving Force for Efficient Light‐Enhanced Hydrogen Generation on Silicon Nanowires

Ming

Turishchev

Schleusener

et al. 2021

Small

View full text Add to dashboard Cite

Efficient light‐stimulated hydrogen generation from top–down produced highly doped n‐type silicon nanowires (SiNWs) with silver nanoparticles (AgNPs) in water‐containing medium under white light irradiation is reported. It is observed that SiNWs with AgNPs generate at least 2.5 times more hydrogen than SiNWs without AgNPs. The authors’ results, based on vibrational, UV–vis, and X‐ray spectroscopy studies, strongly suggest that the sidewalls of the SiNWs are covered by silicon suboxides, by up to a thickness of 120 nm, with wide bandgap semiconductor properties that are similar to those of titanium dioxide and remain stable during hydrogen evolution in a water‐containing medium for at least 3 h of irradiation. Based on synchrotron studies, it is found that the increase in the silicon bandgap is related to the energetically beneficial position of the valence band in nanostructured silicon, which renders these promising structures for efficient hydrogen generation.

show abstract

Controlling the Low-temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

Sharopov

Kaur

Kurbanov

et al. 2021

Silicon

View full text Add to dashboard Cite

A comparative study is carried out for etching a surface with negative and positive ions, and the results show completely opposite physical processes occur on a silicon surface. Irradiation with positive ions exhibits oxide removal, while irradiation with negative ions shows an intense oxidation of the sample surface. Technology for low-temperature ion cleaning and the electron-spectrometric control of silicon wafers has been developed. This technology has been shown that only irradiation with caesium ions followed by annealing at 650 °C leads to an atomically clean silicon surface for several minutes, which is dependent on the pressure of residual gases under vacuum. After cleaning in a vacuum of 10 -9 Pa, the silicon surface begins to oxidize again within 10 min.

show abstract

Advances in Silicon‐Nanoelectronics, Nanostructures and High‐Efficiency Si‐Photovoltaics

Cited by 4 publications

References 17 publications

Scaling of the permanent electric dipole moment in isolated silicon clusters with near-spherical shape

Scaling of the permanent electric dipole moment in isolated silicon clusters with near-spherical shape

Silicon Suboxides as Driving Force for Efficient Light‐Enhanced Hydrogen Generation on Silicon Nanowires

Controlling the Low-temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

Contact Info

Product

Resources

About