Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Cheng, Liwen; Li, Zhenwei; Zhang, Jiayi; Lin, Xingyu; Yang, Da; Chen, Haitao; Wu, Shudong; Yao, Shun

doi:10.3390/nano11082070

Cited by 8 publications

(4 citation statements)

References 21 publications

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“…These values can be compared with the ones that we obtained in improved structures that we proposed in [11][12][13], based on the structure in [10], and further simulations could be performed to also compare the remaining characteristics of the structure in [10], simulated here, with the corresponding characteristics for the improved structures. In this way, the purpose is to obtain and characterize the optimum structure to be used in various domains of applications, in the context of research that recently showed advantages of lasers and LEDs with InGaN barriers over those using GaN ones, such as lowering the optical field leakage and the polarization effect in multiple quantum wells [14]. Thus, the interest for characterizing an optimum structure of an InGaN QW laser, where our future work is directed at, is high and our results might provide a starting point for further experimental and simulation efforts towards achieving this envisioned goal.…”

Section: Discussionmentioning

confidence: 99%

Characteristics of an In0.02Ga0.98N QW laser at a 462 nm wavelength

Drăgulinescu

2023

Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI

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For almost three decades, InGaN (indium gallium nitride) quantum well (QW) lasers have received a lot of interest from the scientific research community. Recently, this material system has become probably the most intensively studied among all the material systems used for quantum well lasers. We simulated the characteristics of an In 0.02 Ga 0.98 N QW laser at a wavelength of 462 nm, particularly the carrier concentration distribution, the potential distribution, the energy band diagram, the wave intensity profile, the I-V and L-I characteristics, the background absorption, the radiative, Auger, Shockley-Read-Hall (SRH) and stimulated recombination, threshold current density, slope efficiency and external differential quantum efficiency, to gain an almost exhaustive general view of the performance characteristics of this structure, constituting in a more useful reference for applications than previous incomplete data gathered for this structure.

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Section: Discussionmentioning

confidence: 99%

Characteristics of an In0.02Ga0.98N QW laser at a 462 nm wavelength

Drăgulinescu

2023

Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI

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“…The Auger recombination is one of the important mechanisms in reducing the efficiency of photovoltaic devices [6][7][8]. BBAR is one of the essential non-radiative recombination techniques that has attracted the attention of different researchers in the field of InGaN/GaN photovoltaic devices [9][10][11]. Various numerical and analytical models have been used to calculate the Auger coefficient and lifetime recombination.…”

Section: Introductionmentioning

confidence: 99%

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Yahyazadeh

2023

Preprint

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In this study, a numerical model was used to analyze the Auger current in c-plane InGaN/GaN multiple-quantum-well light-emitting diodes (MQWLED) under hydrostatic pressure. Finite difference techniques were employed to acquire energy eigenvalues and their corresponding eigenfunctions of \({\text{InGaN/GaN}}\) MQWLED, and the hole eigenstates were calculated via a 6×6 k.p method under applied hydrostatic pressure. Our calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the total Auger coefficient (76% and 20%, respectively). It was found that a change in pressure up to 10 GPa increases the carrier density up to 0.75×1019cm−3 and 0.56×1019cm−3 for the holes and electrons, respectively, and the effective band gap. Based on the result, it could decrease the exaction binding energy, rise the electric field rate up to 0.77MV/cm, and decrease the Auger coefficient and Auger current up to 2.1×10− 31 cm6s− 1and 75A/cm2 in the multiple-quantum well regions, respectively. Our studies provided more detailed insight into the origin of the Auger current drop under hydrostatic pressure in InGaN-based LEDs.

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“…6,7 BBAR is one of the essential non-radiative recombination techniques that has attracted the attention of different researchers in the field of InGaN/ GaN optoelectronic devices. [8][9][10] Auger recombination is the most important parameter for obtaining the Auger coefficient and Auger current. Various numerical and analytical models have been used to calculate the Auger and lifetime recombination.…”

Section: Introductionmentioning

confidence: 99%

Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

Yahyazadeh

Hashempour

2023

J. Nanophoton.

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A numerical model was used to analyze the Auger coefficient in a c-plane InGaN/ GaN multiple-quantum-well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy Eigenvalues and their corresponding Eigenfunctions of InGaN/GaN MQWLD, and the hole Eigenstates were calculated via a 6 × 6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density in the quantum well and barriers and the effective band gap. Based on the result, the exaction binding energy decreased, the electric field rate increased up to 0.77 MV∕cm, and the Auger coefficient decreased down to 2.1 × 10 −31 and 0.6 × 10 −31 cm 6 s −1 in the MQW and barrier regions, respectively. Also, the calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the Auger coefficient. Our study provides more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based light-emitting diodes.

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Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Cited by 8 publications

References 21 publications

Characteristics of an In0.02Ga0.98N QW laser at a 462 nm wavelength

Characteristics of an In0.02Ga0.98N QW laser at a 462 nm wavelength

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

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