2008
DOI: 10.1016/j.nimb.2007.12.115
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AFM and photoluminescence studies of swift heavy ion induced nanostructured aluminum oxide thin films

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Cited by 18 publications
(6 citation statements)
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“…The S e threshold for damage creation was determined to be $20 keV/nm, i.e., quite high as compared to any other amorphizable insulators [7][8][9]. Damage creation above an electronic energy loss of 20 keV/nm was also observed by several groups [10][11][12][13][14][15]. However direct evidence of amorphous tracks was only reported for C60 cluster beams providing electronic energy losses even higher than the heaviest monoatomic ions [6,16].…”
Section: Introductionmentioning
confidence: 91%
“…The S e threshold for damage creation was determined to be $20 keV/nm, i.e., quite high as compared to any other amorphizable insulators [7][8][9]. Damage creation above an electronic energy loss of 20 keV/nm was also observed by several groups [10][11][12][13][14][15]. However direct evidence of amorphous tracks was only reported for C60 cluster beams providing electronic energy losses even higher than the heaviest monoatomic ions [6,16].…”
Section: Introductionmentioning
confidence: 91%
“…In this study, the influence of deposition time on thickness, grain, and roughness of Mo thin film layer has been carried out while argon flow rate, DC power, and working pressure have been made constant during deposition. One of scanning probe microscopy (SPM) mode which is atomic force microscopy (AFM) technique is used to characterize the samples [24,25]. Surface roughness and grain analysis of the samples are analyzed by Image Analyses-P9 (IA-P9) while the thickness is measured with a surface profiler.…”
Section: Journal Of Nanotechnologymentioning
confidence: 99%
“…It is reported that F and F + centers have emission bands at about 410-426 nm (2.91-3.02 eV) and 320 nm (3.87 eV), respectively. and 488 nm (2.54 eV) could be assigned to F 2 + (two oxygen vacancies with three trapped electrons) and Hydroxyl group bound to surface aluminum (Al-OH) centers, respectively [14, 15, 20, 22 and 68] groups bound to a surface aluminum ion (Al OH) which also contribute to the luminescence process, providing emission bands at 490 nm (2.53 eV) [68]. PLE spectra (Fig.12.a) show that the 373 nm (3.32 eV) emission band has three absorption bands centered at 348 nm (3.56 eV), 250 nm (4.96 eV) and slightly below 200 nm (6.2 eV).…”
Section: Photoluminescence Behavior Of Alumina Samplesmentioning
confidence: 99%
“…The peak strength of the strong blue emission depends on the atmosphere and annealing temperature.With increasing calcination temperatures up to 750 o C it the streng decreases and then from 750to 950 o C progressively increased. Some authors attribute it F + centers[69][70][71] while, most studies note that F + centers have an emission band at about 326nm[16][17][18][19][20][21][22]68].We suppose thatcomplex centers [Al i + F] are responsible of this emission band, because it manifests itself in another way.As the calcination temperature is increased up to 750 0 C (correspond to decreases in tetragonal distortion) it decreases and then with increasing calcination temperature from 750 to 950 0 C (correspond to increase in tetragonal distortion ) it increases. It is supposed that the new emission band depends on tetragonal distortion.…”
mentioning
confidence: 96%