ALD deposited ZrO2 ultrathin layers on Si and Ge substrates: A multiple technique characterization

Botzakaki, Martha A.; Xanthopoulos, N.; Makarona, Eleni; Tsamis, C.; Κέννου, Στέλλα; Ladas, S.; Georga, S. N.; Krontiras, C. A.

doi:10.1016/j.mee.2013.03.002

Cited by 21 publications

(7 citation statements)

References 35 publications

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“…The color of the luminescence is determined primarily by the lanthanide ion, but optical spectra are also closely related to its local symmetry with the emission quantum efficiency being strongly related to the phonon energy of the host matrix. Metal oxides are commonly used as host materials, and zirconia (ZrO 2 ) has various valuable physicochemical properties, such as hardness, high refractive index, high chemical stability, high dielectric constant (k ~ 20), and a wide band‐gap (5.16–7.8 eV) . It has been widely used in optical devices, sensors, high temperature coatings, and high‐temperature electrochemical systems, and its low phonon energy (470 cm −1 ) means that it is potentially an excellent matrix for luminescence, because a low phonon energy results in low nonradiative transitions and enhanced luminescence efficiency …”

Section: Introductionmentioning

confidence: 99%

Preparation and optical properties of samaria‐doped yttria‐stabilized zirconia single crystals

Tan

Wang

et al. 2019

J Am Ceram Soc

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Single crystals of yttria‐stabilized zirconia (YSZ) doped with various concentrations of Sm2O3 were synthesized by the optical floating zone method, and their structure and spectroscopic properties characterized using powder X‐ray diffraction (XRD), optical absorption, and luminescence measurements. XRD showed that the cubic phase of ZrO2 was stabilized by addition of Y2O3 and a series of absorption peaks characteristic of Sm3+ was detected by UV‐visible absorption spectroscopy. Three phenomenological J‐O oscillator strength parameters Ωt (t = 2, 4, 6) were calculated to evaluate the local structure and bonding in the vicinity of the Sm3+ for the 0.75 mol% Sm2O3: YSZ sample. These were in order of Ω2 < Ω4 < Ω6 with values of Ω2 = 5.46 × 10−20 cm2, Ω4 = 10.70 × 10−20 cm2, and Ω6 = 12.67 × 10−20 cm2, and indicate a relatively high symmetry and low covalent character for the Sm‐O bond at the Sm3+ sites in the YSZ matrix. Photoluminescence spectra recorded under an excitation of 404 nm showed four emission bands centered at 571 nm, 621 nm, 652 nm, and 716 nm corresponding to the transitions 4G5/2→6Hj (j = 5/2, 7/2, 9/2, 11/2). The transition probability, lifetime, and branching ratio obtained from the emission spectrum of the 0.75 mol% Sm2O3: YSZ crystal showed that YSZ is a potential host for Sm3+ to achieve a reddish‐orange laser output, and the Sm3+‐modified YSZ crystals have a possible use in reddish‐orange laser and lighting devices.

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Section: Introductionmentioning

confidence: 99%

Preparation and optical properties of samaria‐doped yttria‐stabilized zirconia single crystals

Tan

Wang

et al. 2019

J Am Ceram Soc

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“…Among these materials, ZrO 2 is a potential choice. ZrO 2 has a wide bandgap (5.16–7.8 eV) and a high dielectric constant (20–25) [ 17 ]. However, the ZrO 2 /GaN interface has some issues, such as a poor conduction band offset with GaN of (~1.1 eV), and a very high interface state density.…”

Section: Introductionmentioning

confidence: 99%

Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics

et al. 2022

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A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al2O3/ZrO2 stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance, and enhance the stability after thermal stress or time stress. The MOS-HEMT has a maximum drain current density of 847 mA/mm and peak transconductance of 181 mS/mm. The corresponding subthreshold swing and on/off ratio are 95 mV/dec and 3.3 × 107. The gate leakage current can be reduced by three orders of magnitude due to the Al2O3/ZrO2 stacked layer, which also contributes to the lower flicker noise. The temperature-dependent degradation of drain current density is 26%, which is smaller than the 47% of reference HEMT. The variation of subthreshold characteristics caused by thermal or time stress is smaller than that of the reference case, showing the proposed Al2O3/ZrO2 stacked gate dielectrics are reliable for device applications.

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“…In order to fabricate waveguide structures, high refractive index contrast materials are needed. Zirconia has attracted attention due to its useful properties, including high stability, low phonon energy, a wide band gap and a high refractive index [8][9][10]. Zirconia thin films on glass or quartz substrates have significant applications in the field of integrated optics [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Monomode Optical Waveguide Achieved by Lattice Damage in Yttria-Stabilized Zirconia Crystal Induced from Energetic Oxygen Irradiation

2021

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With valuable physicochemical properties, yttria-stabilized zirconia crystal has promising advantages in optical applications. In this paper, the waveguide effect is observed in yttria-stabilized zirconia crystal irradiated by energetic oxygen ions. The waveguide properties and the field intensity are analyzed using prism and end-face coupling method arrangements, and the results show that monomode is found in the near-surface region and the light beam can be well confined in the waveguide structure, which shows refractive index distribution of the barrier-wall and enhanced-well type. The lattice damage induced by irradiation is investigated by the Rutherford backscattering/channeling experiment and high-resolution X-ray diffraction techniques. The simulation results are in good agreement with the experimental data.

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ALD deposited ZrO2 ultrathin layers on Si and Ge substrates: A multiple technique characterization

Cited by 21 publications

References 35 publications

Preparation and optical properties of samaria‐doped yttria‐stabilized zirconia single crystals

Preparation and optical properties of samaria‐doped yttria‐stabilized zirconia single crystals

Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics

Monomode Optical Waveguide Achieved by Lattice Damage in Yttria-Stabilized Zirconia Crystal Induced from Energetic Oxygen Irradiation

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