AlGaN/GaInN/GaN heterostructure field‐effect transistor

Abstract

We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 Â 10 13 cm À2 at an InN molar fraction of 0.60. The Al 0.30 Ga 0.70 N/Ga 0.40 In 0.60 N heterostructure exhibited static field-effect transistor (FET) characteristics.

InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

“…Recently, there have been several attempts to employ InGaN as a channel in AlGaN-based and InAlN-based HEMTs. [8][9][10][11][12] In these structures, the GaN buffer layer below the InGaN channel served as a natural back-barrier and improved electron confinement as verified by capacitance-voltage measurements. 8,11 However, all the HEMT structures with InGaN channel synthesized so far exhibited high sheet resistance due to either low mobility or low carrier density.…”

“…3(a) similar to observations from AlGaN-based structures. 10,11 A record high electron mobility of 1290 cm 2 /VÁs was obtained for the HEMT structure with InN molar fraction of 0.05. In spite of higher sheet charge density in our structures, the electron mobility was higher than that in the AlGaN structures 8,9,11 within the entire In x Ga 1-x N compositional range 0 x 0.1.…”

Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire

“…However, it is difficult to obtain a thick InGaN film with a higher surface quality . Indium atoms with larger radii may cause the structural disorder of bond length and angle, which is enhanced as the thickness increases …”

InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

“…[2][3][4][5] Recently, heterostructures with an InGaN channel were reported as promising candidates in HEMT fabrication owing to their superiority with respect to the traditional GaN-channel structures. [6][7][8][9][10][11][12][13][14][15][16][17] The carriers in the InGaN channel have a higher steady-state peak drift velocity owing to the lower electron effective mass, 18) which is beneficial to improve the high-frequency operations. Insertion of an InGaN channel between the wide-band-gap barrier (AlN, AlGaN, or InAlN) and GaN buffer layers achieves the design of double heterostructure, which is an effective approach to enhance the confinement of the two-dimensional electron gas (2DEG).…”