AlN piezoelectric thin films for energy harvesting and acoustic devices

Fei, Chunlong; Liu, Xiangli; Zhu, Benpeng; Li, Di; Yang, Xiaofei; Yang, Yanchao; Zhou, Qifa

doi:10.1016/j.nanoen.2018.06.062

Cited by 195 publications

(88 citation statements)

References 164 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Numerous piezoelectric materials were investigated for energy harvesting in MEMS applications, but the most commonly used are ZnO [7], lead zirconate titanate (PZT) [8,9], polyvinylidene fluoride (PVDF) [10], and AlN [11]. In particular, AlN, prepared by sputtering, can be implemented in standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing [12], thereby, enabling the integration of PEH with active devices.…”

Section: Introductionmentioning

confidence: 99%

“…Sputtered AlN is a promising material for PEH applications, due to low-temperature preparation, unique physical properties (such as a high thermal stability, with a melting point of ≈2100 • C and piezoelectric effect up to temperatures of ≈1150 • C; high longitudinal velocity of ≈11,000 m•s −1 ; and wide band gap of ≈6.2 eV), high level of mechanical stiffness, and good piezoelectric and dielectric properties [11].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

et al. 2020

View full text Add to dashboard Cite

In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d33 of (7.33 ± 0.08) pC∙N−1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of ≈330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

et al. 2020

View full text Add to dashboard Cite

show abstract

“…They have excellent semiconducting and piezoelectric properties with permanent polarizations along the c-axis crystallographic direction. AlN has been widely used in energy harvesting and ultrasound tweezers applications [17][18][19]. ZnO piezoelectric thin film does not require high-temperature post-deposition annealing and high-voltage poling process [20].…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric ZnO thin films for 2DOF MEMS vibrational energy harvesting

Tao

Tang

et al. 2019

Surface and Coatings Technology

115

View full text Add to dashboard Cite

Zinc oxide (ZnO) is an environmental-friendly semiconducting, piezoelectric and nonferroelectric material, and plays an essential role for applications in microelectromechanical systems (MEMS). In this work, a fully integrated two-degree-of-freedom (2DOF) MEMS piezoelectric vibration energy harvester (p-VEH) was designed and fabricated using ZnO thin films for converting kinetic energy into electrical energy. The 2DOF energy harvesting system comprises two subsystems: the primary one for energy conversion and the auxiliary one for frequency adjustment. Piezoelectric ZnO thin film was deposited using a radio-frequency magnetron sputtering method onto the primary subsystem for energy conversion from mechanical vibration to electricity. Dynamic performance of the 2DOF resonant system was analyzed and optimized using a lumped parameter model. Two closely located but separated peaks were achieved by precisely adjusting mass ratio and frequency ratio of the resonant systems. The 2DOF MEMS p-VEH chip was fabricated through a combination of laminated surface micromachining process, double-side alignment and bulk micromachining process. When the fabricated prototype was subjected to an excitation acceleration of 0.5 g, two close resonant peaks at 403.8 and 489.9 Hz with comparable voltages of 10 and 15 mV were obtained, respectively.

show abstract

“…Due to the CMOS compatibility, AlN could be a promising material for piezo-based applications [17,18]. Researchers widely investigate the possibility of using AlN in energy harvesting devices, ultrasonic transducers, power semiconductor devices and magneto electric sensors [19,20]. Even though other piezoelectric materials (in the form of polymers or complex oxides) offer higher piezoelectric coefficients, AlN allows the incorporation of the proposed sensor into state-of-the-art silicon technology.…”

Section: Introductionmentioning

confidence: 99%

A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric

Winterfeld

Thormählen

Lewitz

et al. 2019

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Piezoelectric materials have been introduced to transistor gate stacks to improve MOSFET behaviour and develop sensor applications. In this work, we present an approach to a partly industrial field effect transistor, with a gate stack based upon low temperature AlN. Using the piezoelectric effect of the nitrogen-polar AlN, we are able to drive the transistor by inducing strain across the device. To ensure maximum sensitivity, the piezoelectric material is placed as closely to the transistor channel as possible and the transistor is operated in the most sensitive part of the sub-threshold regime. This allows the detection of different magnitudes of force applied to the device and to easily distinguish between them. The created sensor was analysed using XRD, current-voltage and specific force application measurements. Furthermore, the continuous response to periodic low frequency stimulation is investigated. Therefore, we introduce a highly scalable device with a wide range of application possibilities, ranging from varying sensor systems to energy harvesting.Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

show abstract

AlN piezoelectric thin films for energy harvesting and acoustic devices

Cited by 195 publications

References 164 publications

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

Piezoelectric ZnO thin films for 2DOF MEMS vibrational energy harvesting

A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric

Contact Info

Product

Resources

About