Industrial electronics are in great demand for oil and gas exploration, well drilling, and automotive applications where the operating temperature goes beyond 200°C. Circuit designs using conventional complementary metal-oxide semiconductor (CMOS) technology are mostly rated at maximum of 125°C, which is not suitable for harsh environment. In this paper, a high-temperature (HT) 9-bit successive approximation register analog-to-digital converter (SAR ADC) designed in silicon-on-insolation CMOS technology with a sampling rate of 50 kS/s is presented. The design considerations of the HT SAR ADC are discussed from process selection, temperature-aware circuit design, and measurement perspectives. The ADC achieves an effective number of bit (ENOB) of 8.35 bits and a figure of merit of 93 pJ/step at room temperature. Under HT test, ENOBs of 7.3 bits at 225°C and 6.9 bits at 300°C are obtained. The power consumption is 1.52 mW from a 5-V supply at room temperature and only 2.17 mW at 300°C. range of the ADC is 0-3 V, and reference voltage V ref is set to 3 V. This choice makes no specified need for bootstrapped S/H switch and rail-to-rail input comparator. 420 L. ZOU, J. PATHROSE AND M. JE