An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications

Huang, Jim; Jackson, Gordon; Shanfield, S.; Platzker, A.; Saledas, P.; Weichert, C.

doi:10.1109/22.234507

Cited by 74 publications

(19 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This dispersion was attributed to piezo-related charge states at the surface, which create a parasitic gate between the gate and drain. This parasitic gating concept is analogous to that described for GaAs devices [19]. In related large-signal measurements, Nguyen et al [5] observed changes in the dc drain current of GaN HEMTs as a function of the input radio frequency (RF) drive.…”

Section: Surface Trapping In Gan Fetsmentioning

confidence: 76%

“…AlGaAs/InGaAs pseudomorphic HEMTs (PHEMTs) displayed similar surface trapping effects, which were possibly exacerbated due to the closer proximity of the surface to the active channel [19]. Analogous to the GaAs MESFET, compressed pulsed -characteristics and poor microwave power performance were obtained for devices plagued by surface trapping.…”

Section: Trapping In Gaas Fets-an Overviewmentioning

confidence: 99%

See 1 more Smart Citation

Trapping effects in GaN and SiC microwave FETs

2002

View full text Add to dashboard Cite

show abstract

Section: Surface Trapping In Gan Fetsmentioning

confidence: 76%

Section: Trapping In Gaas Fets-an Overviewmentioning

confidence: 99%

Trapping effects in GaN and SiC microwave FETs

2002

View full text Add to dashboard Cite

show abstract

“…The gate-lag effects are attributed to the surface traps and the drain-lag effects to buffer or substrate traps [1] [2]. Many measurements validated this point: techniques of surfaces passivations are now very efficient and we can notice that gate-lag effects are quasi-removed on the up to date devices.…”

Section: Introductionmentioning

confidence: 84%

A Drain-Lag Model for AlGaN/GaN Power HEMTs

Jardel

Groote

Charbonniaud³

et al. 2007

2007 IEEE/MTT-S International Microwave Symposium

View full text Add to dashboard Cite

-A circuit modeling drain-lag effects has been added in a non-linear electrothermal model for AlGaN/GaN HEMTs. Modeling these trapping effects allows a better description of the I-V characteristics of measured devices as well as their large-signal characteristics. This drain-lag model is well suited to preserve the convergence capabilities and the simulation times of the non linear models of theses devices. This paper presents our drain-lag modeling approach, the implementation of the model in CAD software, its operating mode, and also the parameters extraction from measurements. Then, significant comparison results will be reported on pulsed IV and large signal measurements with an AlGaN/GaN HEMT transistor.

show abstract

“…Experimentally, novel recess and channel designs [5]- [9] have led to significant breakdown voltage improvements. Theoretical explanations of breakdown behavior have appealed to impact ionization [10]- [13], tunneling and thermionic field emission [14]- [16], or combinations thereof [17]- [19].…”

Section: Introductionmentioning

confidence: 99%

Off-state breakdown in power pHEMTs: the impact of the source

Somerville

Alamo²,

Saunier³

1998

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Abstract-Conventional wisdom suggests that in pseudomorphic high electron mobility transistors (pHEMT's), the field between the drain and the gate determines off-state breakdown, and that the drain to gate voltage therefore sets the breakdown voltage of the device. Thus, the two terminal breakdown voltage is a widely used figure of merit, and most models for breakdown focus on the depletion region in the gate-drain gap, while altogether ignoring the source. We present extensive new measurements and simulations that demonstrate that for power pHEMT's, the electrostatic interaction of the source seriously degrades the device's gate-drain breakdown. We identify the key aspect ratio that controls the effect, L LLG

show abstract

An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications

Cited by 74 publications

References 18 publications

Trapping effects in GaN and SiC microwave FETs

Trapping effects in GaN and SiC microwave FETs

A Drain-Lag Model for AlGaN/GaN Power HEMTs

Off-state breakdown in power pHEMTs: the impact of the source

Contact Info

Product

Resources

About