An efficient MOS-capacitor based silicon modulator and CMOS drivers for optical transmitters

Webster, M.; Gothoskar, Prakash; Patel, Vaama; Piede, D.; Anderson, Sean P.; Tummidi, Ravi S.; Adams, Donald; Appel, Craig; Metz, Peter; Sunder, S.; Dama, B.; Shastri, K.R.

doi:10.1109/group4.2014.6961998

Cited by 56 publications

(35 citation statements)

References 6 publications

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“…The electrical energy consumption then should not exceed a few fJ/bit. The loss-voltage-length product of POH modulators comes close to reach similar values as reported for metal-oxide-semiconductor (MOSCAP) of 7 dBV [32] or silicon-insulator-silicon capacitor (SISCAP) 13 dBV [33] optical modulators. However, the voltage-length product of POH-modulators (~0.04 Vmm) can be multiple times smaller compared to MOSCAP (~0.9 Vmm) or SISCAP (~1 Vmm) modulators.…”

Section: Simulation Of the Poh Modulator Performance Enhancementsupporting

confidence: 78%

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Harnessing nonlinearities near material absorption resonances for reducing losses in plasmonic modulators

Haffner¹,

Heni²,

Elder³

et al. 2017

Opt. Mater. Express

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The electro-optic coefficient (Pockels coefficient) is largest around the absorption resonance of a material. Here, we show that the overall losses, the power consumption and the footprint of plasmonic electro-optic modulators can be reduced when a device is operated in the vicinity of absorption resonances of an electro-optical material. This near-resonant operation in plasmonics is contrary to what is known from photonics where off-resonant operation is required to minimize the overall losses. The findings are supported by experiments demonstrating a reduction in voltage-length product by a factor of 3 and a reduction in loss by a factor 2 when operating a plasmonic modulator near resonance compared to off-resonant.

show abstract

Section: Simulation Of the Poh Modulator Performance Enhancementsupporting

confidence: 78%

“…The latter technology uses the Pockels effect in organic electro-optic (OEO) materials [26,[28][29][30]. To date, the plasmonic enhancement has led to a more than 10-fold reduction of the voltagelength (U π L) product compared to the best photonic approaches [31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Harnessing nonlinearities near material absorption resonances for reducing losses in plasmonic modulators

Haffner¹,

Heni²,

Elder³

et al. 2017

Opt. Mater. Express

View full text Add to dashboard Cite

show abstract

“…Surprisingly, the rise/fall time remains sufficiently short up to 40 Gbd, and only shows slight degradation at 50 Gbd speed. Such findings indicate that, with a properly designed IC driver, lumped modulators can well meet the requirement for 40-50 Gbd high-speed applications, as demonstrated by Cisco's SISCAP (MOS-type) modulators with dedicated IC drivers [16,34]. Z 0 10 Ω is just a proof-of-concept demonstration.…”

Section: Discussionmentioning

confidence: 89%

Single-drive high-speed lumped depletion-type modulators toward 10 fJ/bit energy consumption

Yang

Fang

et al. 2017

Photon. Res.

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Reduction of modulator energy consumption to 10 fJ∕bit is essential for the sustainable development of communication systems. Lumped modulators might be a viable solution if instructed by a complete theory system. Here, we present a complete analytical electro-optic response theory, energy consumption analysis, and eye diagrams on absolute scales for lumped modulators. Consequently the speed limitation is understood and alleviated by single-drive configuration, and comprehensive knowledge into the energy dependence on structural parameters significantly reduces energy consumption. The results show that silicon modulation energy as low as 80.8 and 21.5 fJ∕bit can be achieved at 28 Gbd under 50 and 10 Ω impedance drivers, respectively. A 50 Gbd modulation is also shown to be possible. The analytical models can be extended to lumped modulators on other material platforms and offer a promising solution to the current challenges of modulation energy reduction.

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“…Such structures typically use a PIN or PN diode structure based in or around the optical waveguide to alter the density of free carriers in interaction with propagating light [8]. Alternatively, capacitor like structures which use the accumulation of free carriers around a thin dielectric layer based in the waveguide have also been demonstrated [9]. Silicon optical modulators which are based upon the depletion of free carriers from a PN junction positioned to interact with the optical mode are advantageous in terms of fabrication simplicity and high speed performance.…”

Section: Introductionmentioning

confidence: 99%

High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

Reed¹,

Thomson²,

Gardès³

et al. 2014

Front. Phys.

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This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4 to 1.9 V/cm range are demonstrated for drive voltages between 0 V and 6 V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the center of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the center of the waveguide. Finally, we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

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An efficient MOS-capacitor based silicon modulator and CMOS drivers for optical transmitters

Abstract: We present an efficient MOS-capacitor based silicon modulator. In an MZI configuration, a 9dB extinction ratio at 28 Gbps is achieved from the 1V output of a low-power CMOS inverter driver IC.

Cited by 56 publications

References 6 publications

Harnessing nonlinearities near material absorption resonances for reducing losses in plasmonic modulators

Harnessing nonlinearities near material absorption resonances for reducing losses in plasmonic modulators

Single-drive high-speed lumped depletion-type modulators toward 10 fJ/bit energy consumption

High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

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