1993
DOI: 10.1109/19.278582
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An improved calibration technique for on-wafer large-signal transistor characterization

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Cited by 97 publications
(50 citation statements)
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“…A power sensor is connected to the input of a reflectometer (coaxial reference plane) to get an error corrected value of the power at the DUT reference plane for an on-wafer probe contact. Reciprocity relationships [13] are used to determine power levels at the DUT reference planes. This is a lot more accurate than applying a de-embedding correction between reflectometer coaxial planes and the probe tip planes.…”
Section: Linearity Measurementsmentioning
confidence: 99%
“…A power sensor is connected to the input of a reflectometer (coaxial reference plane) to get an error corrected value of the power at the DUT reference plane for an on-wafer probe contact. Reciprocity relationships [13] are used to determine power levels at the DUT reference planes. This is a lot more accurate than applying a de-embedding correction between reflectometer coaxial planes and the probe tip planes.…”
Section: Linearity Measurementsmentioning
confidence: 99%
“…As shown in Figure 2, the incident and reflected power waves at input and output ports (ports 1 and 2) are measured (samplers 1 and 2) using a vector network analyzer (VNA). After the VNA calibration at the on-wafer reference planes and power calibration with a power meter [15][16][17], the system measures:…”
Section: Load-pull Test-setmentioning
confidence: 99%
“…Ferrero and Pisani [1] developed a test setup for on-wafer transistor characterization, initially suggested by Hecht [2], for devices with coaxial connectors. They started the calculations of the input error box by connecting open, short and load (OSL) standards to the on-wafer input port.…”
Section: Introductionmentioning
confidence: 99%
“…The problem becomes very difficult in the case of on-wafer characterization of nonlinear devices such as transistors. Several deembedding techniques have been used to extract the error box parameters introduced by the test fixture used for the characterization of on-wafer device [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%