Light-Emitting Devices, Materials, and Applications 2019
DOI: 10.1117/12.2509395
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An innovative Si package for high-performance UV LEDs

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Cited by 4 publications
(5 citation statements)
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“…The far field pattern exhibits four local maxima at 40° inclined to the chip normal caused by nearly 50% of the emitted light being emitted via the side surfaces of the LED chip 25 . To obtain a more directional radiation, a specially designed silicon-based surface mounted device package 32 , with an integrated aluminum reflector was used for the packaging of the LEDs (Fig. 1 c).…”
Section: Resultsmentioning
confidence: 99%
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“…The far field pattern exhibits four local maxima at 40° inclined to the chip normal caused by nearly 50% of the emitted light being emitted via the side surfaces of the LED chip 25 . To obtain a more directional radiation, a specially designed silicon-based surface mounted device package 32 , with an integrated aluminum reflector was used for the packaging of the LEDs (Fig. 1 c).…”
Section: Resultsmentioning
confidence: 99%
“…The far-UVC LED chips were flip-chip mounted on 3.5 mm × 3.5 mm surface-mounted device (SMD) Si-based packages (developed by CiS Forschungsinstitut für Mikrosensorik GmbH) with a thermal conductivity of 150 W/(m·K) using AuSn solder paste 32 . The thickness of the Au–Sn layer was determined to be 15 µm.…”
Section: Methodsmentioning
confidence: 99%
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“…Without a filter lid, both LEDs show an identical emission spectrum for all emission angles. With increasing polar emission angle, the peak position and shape of the spectra remain identical but the spectral intensity decreases, following the typical far-field radiation pattern of LEDs in a package with an integrated aluminum reflector [22]. When mounting either a filter S lid or a filter L lid on these LEDs, the spectra change substantially.…”
Section: Spectral Properties Of the Filter And The Led Emissionmentioning
confidence: 76%
“…The wafers were processed with standard microfabrication techniques to LEDs with an actively emitting area of 0.157 mm 2 and 0.485 mm 2 using Pt-based p-contacts and V/Al-based n-contacts [21]. After dicing, 1.06 mm × 0.66 mm and 1 mm × 1 mm chips were flip-chip mounted on Si-based surface-mounted device (SMD) packages with an integrated aluminum reflector [22] as shown in figure 1(a).…”
Section: Methodsmentioning
confidence: 99%