An mK×nK modular image sensor design

Kreider, G.; Bosiers, Jan T.; Dillen, Bart; Heijden, Jurgen van der; Hoekstra, W.; Kleimann, A.C.; Opmeer, P.; Oppers, J.; Peek, H.L.; Pellens, Rudy J. M.; Theuwissen, Albert

doi:10.1109/iedm.1995.497203

Cited by 5 publications

(6 citation statements)

References 4 publications

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“…As it turns out, advances in equipment manufacture just about compensate the increasing production capability of this more expensive equipment: The cost per area of processed silicon has remained approximately constant over the years, on the order of $50/cm2, while offering more functionality on the same chip area. One of the most visible consequences of these impressive advances of semiconductor technology is the marked largest image sensor that has been realized to date is a frame-transfer CCD with 7168x9216 pixels, covering an area of 9x12 cm2 [2]. This sensor is fabricated using silicon wafers with 150 mm diameter.…”

Section: Semiconductor Technology For More and Smaller Pixelsmentioning

confidence: 99%

“…As an example, consider the development of image sensors: In 197 1 the first solid-state image sensor using the charge-coupled device (CCD) principle was demonstrated with the publication of an image acquired with a CCD line sensor exhibiting 96 pixels [1]. Since that time, the science and technology of solid state imaging has made enormous progress: 24 years later, in 1995, the fabrication of a CCD image sensor with more than 66 million (7168x9216) pixels was announced [2]. This amazing development was only possible because of the progress made by silicon semiconductor technology, largely driven by the ever-increasing demand for digital computer memories with higher and higher storage capacity.…”

Section: Introductionmentioning

confidence: 99%

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<title>Smart image sensors: an emerging key technology for advanced optical measurement and microsystems</title>

Seitz

1996

SPIE Proceedings

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Optical microsystems typically include photosensitive devices, analog preprocessing circuitry and digital signal processing electronics. The advances in semiconductor technology have made it possible today to integrate all photosensitive and electronical devices on one "smart image sensor" or photo-ASIC (application-specific integrated circuits containing photosensitive elements). It is even possible to provide each "smart pixel" with additional photoelectronic functionality, without compromising the fill factor substantially. This technological capability is the basis for advanced cameras and optical microsystems showing novel on-chip functionality : Single-chip cameras with on-chip analog-to-digital converters for less than $10 are advertised; image sensors have been developed including novel functionality such as real-time selectable pixel size and shape, the capability of performing arbitrary convolutions simultaneously with the exposure, as well as variable, programmable offset and sensitivity of the pixels leading to image sensors with a dynamic range exceeding 150 dB. Smart image sensors have been demonstrated offering synchronous detection and demodulation capabilities in each pixel (lock-in CCD), and conventional image sensors are combined with an on-chip digital processor for complete, singlechip image acquisition and processing systems. Technological problems of the monolithic integration of smart image sensors include offset non-uniformities, temperature variations of electronic properties, imperfect matching of circuit parameters, etc. These problems can often be overcome either by designing additonal compensation circuitry or by providing digital correction routines. Where necessary for technological or economic reasons, smart image sensors can also be combined with or realized as hybrids, making use of commercially available electronic components. It is concluded that the possibilities offered by custom smart image sensors will influence the design and the performance of future electronic imaging systems in many disciplines, reaching from optical metrology to machine vision on the factory floor and in robotics applications.

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Section: Semiconductor Technology For More and Smaller Pixelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

<title>Smart image sensors: an emerging key technology for advanced optical measurement and microsystems</title>

Seitz

1996

SPIE Proceedings

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“…Large format high-resolution CCD image sensors are not widespread [2,3]. The main technical limitation for CCDs is the input capacitance of the clock signals.…”

Section: Large Format Image Sensorsmentioning

confidence: 99%

“…Several sensors have been made in the past with this format [2,3,4]. The sensor presented here offers the highest resolution available in this format at this moment.…”

Section: Introductionmentioning

confidence: 96%

A 14-megapixel 36 x 24-mm²image sensor

Meynants¹,

Scheffer²,

Dierickx³

et al. 2004

SPIE Proceedings

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We will present a 3044 x 4556 pixels CMOS image sensor with a pixel array of 36 x 24 mm 2 , equal to the size of 35 mm film. Though primarily developed for digital photography, the compatibility of the device with standard optics for film cameras makes the device also attractive for machine vision applications as well as many scientific and highresolution applications. The sensor makes use of a standard rolling shutter 3-transistor active pixel in standard 0.35 µm CMOS technology. On-chip double sampling is used to reduce fixed pattern noise. The pixel is 8 µm large, has 60,000 electrons full well charge and a conversion gain of 18.5 µV/electron. The product of quantum efficiency and fill factor of the monochrome device is 40%. Temporal noise is 35 electrons, offering a dynamic range of 65.4 dB. Dark current is 4.2 mV/s at 30 degrees C. Fixed pattern noise is less than 1.5 mV RMS over the entire focal plane and less than 1 mV RMS in local windows of 32 x 32 pixels. The sensor is read out over 4 parallel outputs at 15 MHz each, offering 3.2 images/second. The device runs at 3.3 V and consumes 200 mW.

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“…The stitching was one of the most favorable processes to allow a single chip occupy any amount of the wafer [6]. The technology was achieved by dividing the reticle into sections that could individually be exposed and aligned with neighboring sections [7]. Making an intensive study of stitching techniques and related guideline would enable CIS to participate in Si process shrinkage that moves to deep sub-micrometer node and is flexibly compatible with advanced manufacture process [8].…”

Section: Introductionmentioning

confidence: 99%

Systematic experimental study on stitching techniques of CMOS image sensors

Zhu

Liu

Zhang

et al. 2016

IEICE Electron. Express

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On the basis of the systematic study of stitching techniques, a large area, 28.3 mm × 38.8 mm, 42 Mega pixels CMOS Imaging Sensor (CIS) had been demonstrated on 12 inch silicon wafer in a 0.055 µm CMOS process. By scanning a reticle across a wafer of silicon, smaller arrays can be stitched together to construct larger area sensors. Meanwhile, in order to verify the feasibility and capability of stitching, a 203 mm × 179 mm, 1.8 Billion pixels CIS was also created without any performance deficiency.

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An mK×nK modular image sensor design

Cited by 5 publications

References 4 publications

<title>Smart image sensors: an emerging key technology for advanced optical measurement and microsystems</title>

<title>Smart image sensors: an emerging key technology for advanced optical measurement and microsystems</title>

A 14-megapixel 36 x 24-mm²image sensor

Systematic experimental study on stitching techniques of CMOS image sensors

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An mK×nK modular image sensor design

Cited by 5 publications

References 4 publications

<title>Smart image sensors: an emerging key technology for advanced optical measurement and microsystems</title>

<title>Smart image sensors: an emerging key technology for advanced optical measurement and microsystems</title>

A 14-megapixel 36 x 24-mm2image sensor

Systematic experimental study on stitching techniques of CMOS image sensors

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Product

Resources

About

A 14-megapixel 36 x 24-mm²image sensor