An organic Schottky diode (OSD) based on a-silicon/polycarbazole contact

Srivastava, Aditi; Chakrabarti, P.

doi:10.1016/j.synthmet.2015.05.024

Cited by 15 publications

(11 citation statements)

References 17 publications

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“…This explains the improvement of the diode parameters. It was reported that the n values in organic Schottky diodes range from 2 to 11 and this factor can be improved in high quality interface [30]. In our case, the ideality factor increase from 2.4 to 7.9 by increasing the immersion time from 30 to 210 min at room temperature.…”

Section: Influence Of the P3ht Deposition On The Electrical Propertiementioning

confidence: 46%

Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode

Rahmani

Meftah

2020

J Mater Sci: Mater Electron

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The electrical properties of Ag/Poly(3-hexylthiophene)/Silicon nanowires heterostructure (Ag/P3HT/SiNWs) were investigated. Silicon nanowires (SiNWs) were obtained by metal-assisted chemical etching method in one-step process. P3HT polymer was deposited on SiNWs surfaces by electroless deposition method for different immersion durations (d im). The morphology of SiNWs before and after deposition of P3HT polymer has been examined by scanning electron microscope (SEM). The formation of nanowires as well as the presence of P3HT on their surfaces can be seen in SEM images. Current-voltage (I-V) measurements were carried out on Ag/P3HT/SiNWs by varying d im from 30 to 210 min. The electrical measurements on the different junctions at room temperature showed a rectifying effect. For 30 min, the ideality factor of the Schottky diode was reduced from 4 to 1,4. By using the Cheung method, the diode parameters of the different structures are determined and discussed. The different hetrostructures have been annealed at 100 °C, 200 and 300 °C. The characteristic parameters were calculated as a function of annealing temperature. The optimum temperature for these heterostructures characteristics is 100 °C. The interface states, the trapping levels and the thermal activation of the free carriers are the main factors involved in the conduction phenomenon through Ag/P3HT/SiNWs heterostructures.

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Section: Influence Of the P3ht Deposition On The Electrical Propertiementioning

confidence: 46%

Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode

Rahmani

Meftah

2020

J Mater Sci: Mater Electron

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“…In recent years, polymer interface materials have been used to increase the properties of these devices (Srivastava & Chakrabarti, 2015;Tozlu & Mutlu, 2016).…”

Section: Introductionmentioning

confidence: 99%

Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures

Avcı

Hussaini

Erdal

et al. 2021

Selçuk Üniversitesi Fen Fakültesi Fen Dergisi

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Recently, interfacial layer such as metal oxide, insulator and polymer have been used by scientists between the metal and semiconductor to increase the stability of the metal-semiconductor heterojunctions. These materials have been varied according to their usage aims. In this study, graphene nanoribbons (GNR) and 7,7,8,8 Tetracyanoquinodimethane (TCNQ, C12H4N4) layer has been used as interfacial layer between the metal and semiconductor for photodiode applications. The TCNQ layer collects and extracts more electrons in the interface of the device and is used as electron acceptor material for organic solar cells. Herein, we fabricated Al/p-Si/Al, Al/p-Si/TCNQ/Al and Al/p-Si/TCNQ:GNR/Al heterojunctions by physical vapor deposition technique. I-V measurements has been employed under dark and various light illumination conditions to show dielectric properties of the fabricated heterojunctions. From current-voltage characteristics, we calculated the electronic parameters such as ideality factor, barrier heights, series resistances and rise times. It can be concluded from overall results that TCNQ and TCNQ:GNR layers had a major impact on quality and can be considered as quite proper materials for optoelectronic applications.

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“…Carbazole is one of the aromatic heterocyclic organic compounds that could lead to the formation of a conducting polymer film by oxidation. Resulting carbazole-based conjugated polymer films can be used as components of sensors (Joshi et al, 2014;Vedarajan et al, 2014), batteries (Saraswathi et al, 1999), OLED (Grigalevicius et al, 2011;Srivastava and Chakrabarti, 2015), or electrochromic devices (Hu et al, 2013;Hsiao and Lin, 2016), mainly because of their electron-donating nature, high photoconductivity and strong fluorescence.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Polycarbazoles Thin Films Prepared by Electrochemical Oxidation of Synthesized Carbazole Derivatives

et al. 2019

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Polycarbazole and its derivatives have advantages of good environmental stability, electrochromic properties and photoconductivity which have attracted considerable attention because of their potential industrial applications in electroluminescent applications, rechargeable batteries, and light emitting diodes. They have the possibility of different position substitution (carbon C 3-C 3 ' or N) that lead to different electropolymerization behaviors. However, the N position facilitates the grafting of various derivatives of interest and permits not to modify so much the radical cation formation during electropolymerization. In this paper, carbazole and its derivatives were electrochemically oxidized in acetonitrile solutions leading to the formation of thin polymer films. The morphological features and electrochemical properties of the as-formed polymer films were investigated in detail. Thanks to these experiments, the influence of the substitution on the properties of the polymer films was evidenced and discussed. In addition, fast electrochemistry experiments were carried out on platinum microelectrodes within 50-1,000 V/s scan speed range. Reactivity of carbazole derivatives radical cations and dimers was investigated through these experiments. Thermodynamic and kinetic information (e.g., redox standard potential, heterogeneous, and dimerization rate constants) was extracted after coupling with electrochemical simulations.

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An organic Schottky diode (OSD) based on a-silicon/polycarbazole contact

Cited by 15 publications

References 17 publications

Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode

Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode

Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures

Investigation of Polycarbazoles Thin Films Prepared by Electrochemical Oxidation of Synthesized Carbazole Derivatives

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