An overview of radiation effects on electronics in the space telecommunications environment

Fleetwood, D.M.; Winokur, P.S.; Dodd, P.E.

doi:10.1016/s0026-2714(99)00225-5

Cited by 88 publications

(30 citation statements)

References 91 publications

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“…Such disruption of onboard electronics by energetic particles has been a matter of concern for scientists and engineers over several decades, and is often reported over the South Atlantic Anomaly (SAA) and polar region (Reed et al 1973;Torr et al 1975;Gledhill 1976;Campbell et al 1992;Fleetwood et al 2000). SAA, a region of low magnetic field in the South Atlantic Ocean extending over to the South American continent is generated due to the offset of the Earth's magnetic dipole and is a major sink of trapped charged particles, giving rise to electron and proton precipitation (Dessler 1959).…”

Section: Introductionmentioning

confidence: 99%

Abnormal Signatures Recorded by FORMOSAT-2 and FORMOSAT-3 over South Atlantic Anomaly and Polar Region

Lee¹,

Rajesh²,

Chen³

et al. 2014

Terr. Atmos. Ocean. Sci.

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Computer systems onboard FORMOSAT-2 (F2) and FORMOSAT-3/COSMIC (F3/C) satellites often register abnormal signatures which are recorded as automatic reconfiguration orders (ARO) in F2, and reboot/reset (RBS) in F3/C. The ARO and RBS spatial distribution counts recorded since the launch of satellites is investigated to identify regions of anomalous events. Data from the star tracker onboard F2 and Tiny Ionosphere Photometer (TIP) onboard F3/C are also analyzed. The results show that the F2 ARO and F3/C RBS cluster over the SAA (South Atlantic Anomaly) region and also over the poles, which suggest that high energy particles bombarding the satellite electronics play an important role.

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Section: Introductionmentioning

confidence: 99%

Abnormal Signatures Recorded by FORMOSAT-2 and FORMOSAT-3 over South Atlantic Anomaly and Polar Region

Lee¹,

Rajesh²,

Chen³

et al. 2014

Terr. Atmos. Ocean. Sci.

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“…Power semiconductor devices have vast applications in telecommunication, military, and aerospace sectors mainly as switches in power electronics systems (Fleetwood et al, 2000). The existence of the defects in the gate oxide (SiO 2 ) and at the interface Si/SiO 2 of a voltage in n-channel power vertical double-diffused metal-oxide-semiconductor field effect transistor (VDMOSFET) transistor is very important fact relating to their reliability (Nissan-Cohen et al, 1985;Zhang et al, 2003).…”

Section: Introductionmentioning

confidence: 99%

Comparison between positive and negative bias stress on N‐channel VDMOSFET transistors

Abboud

Habch

Cuminal

et al. 2013

International Journal of Structural Integrity

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If you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation. AbstractPurpose -The purpose of this paper is to apply a negative gate bias stress in order to study instabilities of threshold voltage in N-channel power vertical double-diffused metal-oxide-semiconductor field effect transistor (VDMOSFET). Variations in gate oxide trapped charge and interface trap densities are also calculated. Design/methodology/approach -A threshold voltage shift is detected; the oxide and interface trap densities were evaluated based on a direct measurement of the gate to source capacitance and conductance. Findings -Results presented show that the threshold voltage is decreasing with stress time, the capacitance and conductance curves are altered by applied stress, also the oxide traps and the interface traps densities are increasing with stress time. Originality/value -The positive bias stress seems to be more destructive in the case of the studied devices.

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“…However, this region is especially inhospitable to high-fidelity scientific instrumentation on account of the strong doses of ionizing radiation to which circuits are exposed as a result of large populations of trapped energetic particles [3].…”

Section: Introductionmentioning

confidence: 99%

A TID and SEE Radiation-Hardened, Wideband, Low-Noise Amplifier

Mossawir

Linscott

Inan

et al. 2006

IEEE Trans. Nucl. Sci.

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We have developed a radiation-hardened, highly linear, wideband, low-noise amplifier (LNA) with programmable gain to serve as the front-end of a plasma-wave instrument for satellite-based electric-field measurements of very low frequency (VLF) phenomena in the Van Allen radiation belts. Fabricated in a commercial 0.25-m silicon-germanium BiCMOS process, this ASIC leverages radiation-hardness-by-design techniques at the topological, implementation, and layout levels to maintain 75-dB spurious-free dynamic range (SFDR) over nearly four decades of frequency, from 100 Hz to 1 MHz, for both proton and -ray total ionizing dose (TID) exposures up to 1000 krad(Si). Single-event effect (SEE) testing via pulsed laser confirms negligible latchup sensitivity and suppression of single-event transients(SETs) at the output for beam energy LET equivalents in excess of 100 MeV-cm 2 /mg in even the most sensitive regions of the die.

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An overview of radiation effects on electronics in the space telecommunications environment

Cited by 88 publications

References 91 publications

Abnormal Signatures Recorded by FORMOSAT-2 and FORMOSAT-3 over South Atlantic Anomaly and Polar Region

Abnormal Signatures Recorded by FORMOSAT-2 and FORMOSAT-3 over South Atlantic Anomaly and Polar Region

Comparison between positive and negative bias stress on N‐channel VDMOSFET transistors

A TID and SEE Radiation-Hardened, Wideband, Low-Noise Amplifier

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