An ultra-wideband Darlington low noise amplifier design based on SiGe HBT

Shen, Pei; Zhang, Wanrong; Xie, Hongyun; Jin, Dayong; Zhang, Wei; Li, Jia; Jun-ning, Gan

doi:10.1109/icmmt.2008.4540696

Cited by 7 publications

(2 citation statements)

References 10 publications

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“…It is critical to boost the gain of RFAs for loss compensation and signal conditioning while maintaining a compact form factor and low complexity. To improve the gain of an RFA, various circuit topologies, such as a cascode configuration and Darlington structure, have been proposed in the literature [6][7][8][9][10]. The cascode topology provides increased output resistance that leads to a higher output voltage, and increased isolation between the input and output ports, which simplifies the design of the matching network and reduces the Miller effect, at the cost of a higher power supply.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

Sarker

Song

2020

Electronics

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For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an fT-doubler topology in a silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) technology platform. The through-silicon vias (TSVs), typically used for small-size chip packaging purposes, have been effectively utilized as an adjustable matching element for input impedance, reducing the overall area of the chip. The proposed RFA, fabricated in a modest 0.35 µm SiGe technology, achieves a gain of 14.1 dB at 20 GHz center frequency, and a noise figure (NF) of 11.2 dB at the same frequency, with a power consumption of 3.3 mW. The proposed design methodology can be used for achieving high gain, avoiding a complex multi-stage amplifier design approach.

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Section: Introductionmentioning

confidence: 99%

Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

Sarker

Song

2020

Electronics

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“…In this paper ,detailed analysis and general design procedures about novel temperature compensated amplifier are given [5] . Using this reconfigurable architecture, the amplifiers have a lower sensitivity to temperature ,higher output voltage headroom and output power.…”

Section: Introductionmentioning

confidence: 99%