An X-band low-power CMOS low noise amplifier with transformer inter-stage matching networks

Tsai, Jeng-Han; Huang, Wang-Long; Lin, Cheng-Yen; Chang, Ruei-An

doi:10.1109/eumic.2014.6997909

Cited by 10 publications

(5 citation statements)

References 6 publications

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“…The chip size of the LNA is 1 mm 2 including all the testing pads and the buffer. TCAS 2018 [26] MWCL 2016 [27] IETMAP 2009 [28] TMTT 2014 [29] TCAS 2018 [30] VLSI 2012 [31] MWCL 2007 [32] EuMC 2014 [33] This work Frequency (GHz) The results show good agreement with measured data over the entire frequency range of interest. The proposed triple-cascode LNA has the advantages of good noise performance and good gain flatness across 8-12 GHz.…”

Section: Discussionsupporting

confidence: 59%

CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

Cao

Wang

et al. 2021

IET Circuits, Devices & Syst

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A pole-converging X-band low-noise amplifier (LNA) using 130 nm CMOS technology is proposed. An on-chip pole-converging capacitor C PC is added between the gate and drain node of the common-gate (CG) stage. The capacitor C PC combines with a noisereducing inductor L 1 to converge poles into the desired band, which results in a poleconverging effect and wideband performance. The proposed modified broadband simultaneous noise and input-matching technique is adopted in triple-cascode configuration to realize good input matching and a low noise figure (NF). Measurement results exhibit a flat maximum power gain of 17.6 dB from 8 to 12 GHz and a reverse isolation over 60 dB within the desired bandwidth along with an NF ranging from 1.5 to 3.6 dB. The LNA core dissipates 17 mW from 2.4 V supply, and the chip size occupies 1.1 � 0.9 mm 2 including all pads. The simulated and measured results show good agreement from 8 to 12 GHz.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Discussionsupporting

confidence: 59%

CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

Cao

Wang

et al. 2021

IET Circuits, Devices & Syst

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“…It can be seen that the proposed LNA achieves the best FOM and Gain/Power ratio among these designs in X‐band for low‐voltage application . And furthermore, the performance of this novel architecture is better than or comparable with the state of art low‐power normal voltage or below X‐band LNA .The good gain and NF with improved linearity is a result from the proposed novel design with notch filter and diode connected MOSFET forward body bias technique for gain and linearity consideration in supply voltage of 0.6 V with sub‐mW power consumption application. These results demonstrate its great potential for ultralow power and ultralow voltage X‐band applications.…”

Section: Measured Results and Discussionmentioning

confidence: 86%

“…The RFSOI CMOS technology is cheaper than the GaAs or BiCMOS technology and can be integrated with base‐band circuits . Today, many interesting and important applications in X‐band, such as medical image data transmission, satellite communication, broadcasting satellite, and radio astronomy, are realized in standard CMOS technology for low cost . Most of these radio frequency (RF) and microwave applications require a low‐noise receiver for system sensitivity consideration.…”

Section: Introductionmentioning

confidence: 99%

“…However, it is almost impossible to achieve a strategy that can achieve all the desired performance, especially in application of low voltage and low power (LVLP). Some work and technique about low voltage, low power, X‐band CMOS LNA are reported, but they do not achieve a good trade‐off between low voltage, low power, and high performance, especially high gain .…”

Section: Introductionmentioning

confidence: 99%

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A 0.6‐V sub‐mW X‐band RFSOI CMOS LNA with novel complementary current‐reused technique

Dai

2017

Circuit Theory & Apps

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A fully integrated 0.6 V low-noise amplifier (LNA) for X-band receiver application based on 0.18 μm RFSOI CMOS technology is presented in this paper. To achieve low noise and high gain with the constraint of low voltage and low power consumption, a novel modified complementary current-reused LNA using forward body bias technique is proposed. A diode connected MOSFET forward bias technique is employed to minimize the body leakage and improve the noise performance. A notch filter isolator is constructed to improve the linearity of low voltage. The measured results show that the proposed LNA achieves a power gain of 11.2 dB and a noise figure of 3.8 dB, while consuming a DC current of only 1.6 mA at supply voltage of 0.6 V.

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“…Some of them were designed on silicon substrate technology [1][2][3]. This technology can provide good noise figure and frequency performance with small dimension factors.…”

Section: Introductionmentioning

confidence: 99%

Broadband GaAs pHemt LNA design for T/R module application

Le¹,

Thong²,

Binh³

2016

JST

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In this paper, a three stages monolithic low noise amplifier for T/R module application is presented. This amplifier is fully integrated on 0.15 µm GaAs pHEMT technology and achieves a wide bandwidth from 6 to 11 GHz. Within this band, the LNA has the minimum of 1.3 dB noise figure and over 25 dB small signal gain. The output third-order intercept point is over 30 dBm and the 1 dB compression point (P 1dB ) is 16 dBm at the output.

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An X-band low-power CMOS low noise amplifier with transformer inter-stage matching networks

Cited by 10 publications

References 6 publications

CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

CMOS X‐band pole‐converging triple‐cascode LNA with low‐noise and wideband performance

A 0.6‐V sub‐mW X‐band RFSOI CMOS LNA with novel complementary current‐reused technique

Broadband GaAs pHemt LNA design for T/R module application

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