Analysis of certain electrical properties in Silicon nanowire field-effect transistors with high-κ HfO2 as gate dielectrics

Das, Sanat Kr.; Chettri, Bibek; Karki, Prasanna; Chettri, Pronita; Deka, Utpal; Sharma, Bikash

doi:10.1109/edkcon56221.2022.10032875

Cited by 2 publications

(1 citation statement)

References 15 publications

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“…Hf-based high-k oxides (Hf-based ferroelectrics) have been identified as one of the most promising candidates in future microelectronic applications [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ] due to their excellent compatibility with existing Complementary Metal Oxide Semiconductor (CMOS) processes [ 8 , 9 , 10 , 11 , 12 , 13 ]. The functional properties of HfO 2 depend critically on its defects: oxygen vacancies [ 14 ] or the metal/HfO 2 [ 15 ] and HfO 2 /substrate [ 3 ] interfaces.…”

Section: Introductionmentioning

confidence: 99%

Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs

et al. 2023

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By combining capacitance–voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of the work function of the gate metals Ti, Mo, Pd, and Ni on the defects in bulk HfO2 and at the HfO2/InGaAs interfaces are studied. The oxidation at Ti/HfO2 is found to create the highest density of interface and border traps, while a stable interface at the Mo/HfO2 interface leads to the smallest density of traps in our sample. The extracted values of Dit of 1.27 × 1011 eV−1cm−2 for acceptor-like traps and 3.81 × 1011 eV−1cm−2 for donor-like traps are the lowest reported to date. The density and lifetimes of border traps in HfO2 are examined using the Heiman function and strongly affect the hysteresis of capacitance–voltage curves. The results help systematically guide the choice of gate metal for InGaAs.

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Section: Introductionmentioning

confidence: 99%

Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs

et al. 2023

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Impact of high-k metal oxide as gate dielectric on the certain electrical properties of silicon nanowire field-effect transistors: A simulation study

Das,

Chettri,

Karki

et al. 2023

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Standard Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) are gaining prominence in low-power nanoscale applications. This is largely attributed to their proximity to physical and thermal limits, rendering them a compelling option for energy-efficient electronic devices. In this study, we hypothesized that the high-? HfO2 in a quasi-ballistic SiNW MOSFET acts as the gate dielectric. In this case, the data from the TCAD simulation and the model demonstrated exceptional agreement. The proposed model for a SiNW MOSFET with high-? HfO2 exhibits a consistently increasing drain current, albeit with a smaller magnitude compared to a quasi-ballistic device (QBD). Additionally, it shows reduced mobility and decreased transconductance when considering the combined effects of scattering and temperature. As gate voltage increases, temperatureinduced transconductance decline in SiNW MOSFETs becomes significant. Our method is suitable for modeling scattered SiNW MOSFETs with temperature effects, as TGF values are similar in the subthreshold region for both Near Ballistic and Scattered SiNW MOSFET models.

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Analysis of certain electrical properties in Silicon nanowire field-effect transistors with high-κ HfO2 as gate dielectrics

Cited by 2 publications

References 15 publications

Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs

Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs

Impact of high-k metal oxide as gate dielectric on the certain electrical properties of silicon nanowire field-effect transistors: A simulation study

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