Analysis of focused ion beam implantation of semiconductors by thermal microscopy

Dietzel, Dirk; Röcken, H.; Pelzl, J.; Bein, B. K.

doi:10.1016/s0257-8972(01)01253-1

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…By photolithographic techniques a mesa of 40 mϫ40 m was defined and then structured by a line of P and As ions of 3-4 m width, by using the microbeam facility of the Dynamitron Tandem Laboratory a͒ Electronic mail: dietzel@ep3.ruhr-uni-bochum.de ͑DTL͒ of Ruhr-University Bochum. 10 As the implantation converts n-Si of the top layer to p-Si, a npn diode-like electrical insulation is produced by the implanted line, which can be used for the fabrication of semiconductor devices. 11 For measurements with the double modulation technique, lines with varying implantations had been produced.…”

Section: Samples and Experimental Configurationmentioning

confidence: 99%

“…1͒, where the localized optical excitation is achieved by a focused modulated Ar-ion laser beam, and simultaneously, electrical heating of the mesa structure could be effected with a dc or ac power supply. 10 For all double modulation experiments, the digital acousto-optical modulator in the optical path of the Ar-ion pump beam and the ac voltage applied for electrical heating have been driven by the same reference frequency f , synchronized to each other ͑Fig. 1͒.…”

Section: Samples and Experimental Configurationmentioning

confidence: 99%

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Double modulated thermoreflectance microscopy of semiconductor devices

Dietzel

Bein

Pelzl

2003

Journal of Applied Physics

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Photothermal microscopy based on combined optical and electrical excitation has been applied to insulating lines and conducting channels on SIMOX mesas prepared by focused ion beam implantation. The double excitation technique permits imaging of electrical properties of the implanted structures yielding complementary information achievable by a single excitation defect tracing. In addition, the contrast of the images of implanted structures can be increased considerably. The best contrast for the observation of insulating lines adjacent to a conducting channel has been achieved by recording the modulated reflectance signal at the fourth harmonic of the modulation frequency used for electrical and optical excitation. The contrast enhancement is found to be mainly due to thermal origins caused by the photoinduced currents, which can act as an additional heat source.

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Section: Samples and Experimental Configurationmentioning

confidence: 99%

Section: Samples and Experimental Configurationmentioning

confidence: 99%

Double modulated thermoreflectance microscopy of semiconductor devices

Dietzel

Bein

Pelzl

2003

Journal of Applied Physics

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Prospects of ion projection techniques for maskless implantation at high ion energies

Meijer

Stephan

2002

Nuclear Instruments and Methods in Physics Research Section B:

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Contrast enhancement of modulated optical reflectance microscopy of semiconductor devices

Dietzel¹,

Roecken²,

Bein³

et al. 2003

Review of Scientific Instruments

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Photothermal microscopy based on combined optical and electrical excitation has been applied to insulating lines prepared by focused ion beam implentation on oxygen implanted mesas. The double excitation technique permits to image electrical properties of the implanted structures which are complementary to simple defect tracing when a single excitation is applied. In addition, the contrast of imaging of implanted structures can be increased considerably. Apart from combining modulated optical excitation with electrical direct current voltages, double modulation configurations can improve the contrast further, by detecting either on a higher harmonic of the single excitation frequency or on the sum or difference of two different excitation frequencies. The influence of different parameters characterizing the experimental configuration gives information on the physical processes of the signal generation, indicating that the observed contrast enhancement is mainly of thermal origin related to the photoinduced currents.

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Analysis of focused ion beam implantation of semiconductors by thermal microscopy

Cited by 3 publications

References 4 publications

Double modulated thermoreflectance microscopy of semiconductor devices

Double modulated thermoreflectance microscopy of semiconductor devices

Prospects of ion projection techniques for maskless implantation at high ion energies

Contrast enhancement of modulated optical reflectance microscopy of semiconductor devices

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