Analysis of gain in determining T/sub 0/ in 1.3 μm semiconductor lasers

Ackerman, D.A.; Shtengel, Gleb; Hybertsen, Mark S.; Morton, Paul A.; Kazarinov, R.F.; Tanbun‐Ek, T.; Logan, R. A.

doi:10.1109/2944.401204

Cited by 84 publications

(59 citation statements)

References 54 publications

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“…The value of the device total loss was obtained from the intersection point of modal gain spectra for TE and TM modes or from the long-wavelength gain saturation value. These methods were previously applied to the characterization of single mode telecommunication lasers [7]. The value of internal efficiency was determined based on the value of optical luss and external efficiency using the standard approach [8].…”

Section: Experimental Methodsmentioning

confidence: 99%

Studies of the Physical Phenomena Limiting the Temperature Performance of GaSb and InAs Based Lasers Operating in Range of 2 micrometers to 4 micrometers

Belenky¹

2001

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Section: Experimental Methodsmentioning

confidence: 99%

Studies of the Physical Phenomena Limiting the Temperature Performance of GaSb and InAs Based Lasers Operating in Range of 2 micrometers to 4 micrometers

Belenky¹

2001

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“…Optical gain measurements combined with the differential carrier lifetime measurements [12] allow for analysis of the respective contributions of different physical mechanisms to a temperature dependence of the threshold current of 1.3 µm lasers [13]. A similar set of measurements was also very useful for optimization of the high-speed performance of 1.55 µm lasers [14], which will be discussed in the Section 7.…”

Section: Determination Of the Optical Gain From The Amplified Spontanmentioning

confidence: 99%

“…This method made it possible to carry out the study of the loss dependence on temperature and carrier concentration [13]. It was shown that optical loss is a weak function of both temperature and carrier concentration and does not play an important role in determining the dependence of the laser output characteristics (such as threshold current and output efficiency) on temperature.…”

Section: Measurement Of the Optical Lossmentioning

confidence: 99%

Advances in Measurements of Physical Parameters of Semiconductor Lasers

Shtengel¹,

Kazarinov²,

Belenky

et al. 1998

Int. J. Hi. Spe. Ele. Syst.

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We present a summary of advances in characterization techniques allowing for comprehensive study of physical processes in semiconductor lasers. 5. Electrical and optical measurements of RF modulation response below threshold. 5.1. Determination of the differential carrier lifetime from the device impedance. 5.2. Determination of the differential carrier lifetime from the optical response measurements. 6. Optical measurements of RF modulation response and RIN above threshold 6.1. Determination of the resonant frequency and damping factor using carrier subtraction technique. Determination of the differential gain and the gain compression coefficient. 6.2. Determination of the resonant frequency and differential gain from the RIN measurements. 7. Measurements of the linewidth enhancement factor. 7.1. Measurements of linewidth enhancement factorfrom ASE and TSE spectra. 8. Measurements of the carrier temperature and carrier heating in semiconductor lasers. 8.1. Determination of carrier heating from wavelength chirp and TSE measurements. 9. References.

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“…This motivates the study of the extent to which the output power can be affected by the internal loss. Here, the effective cross section int for internal absorption loss processes is changed within a typical range 5,6 and the lightcurrent curves ͑LCCs͒ of a quantum dot ͑QD͒ laser are calculated for that range of int . The maximum power is calculated as a function of int .…”

Section: Maximum Power Of Quantum Dot Laser Versus Internal Lossmentioning

confidence: 99%