Analysis of Lateral SOI PIN Diodes for the Detection of Blue and UV Wavelengths in a Wide Temperature Range

Abstract

This work presents an analysis on the performance of lateral thinfilm SOI PIN diodes for the detection of short wavelengths, in the range of blue and ultra-violet (UV) wavelengths, as a function of the temperature, reaching the cryogenic regime. Measurements performed for temperatures ranging from 100 K to 400 K showed that the optical responsitivity of these photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations were performed showing the same trends as the experimental data, and were used to predict the influence of silicon film thickness downscaling on the photodetector performance.

Lateral PIN Photodiode with Germanium and Silicon Layer on SOI Wafers

“…To optimize the absorption of the solar spectrum in the simulated devices, the thickness of the substrate has been increased to 10 μm, except for the analysis of the effect of thickness on the performance of the devices. It is worth mentioning that the RD is composed entirely of silicon [7]. Parameters such as FF, spectral response, and I-V behavior have been calculated and compared.…”

“…The silicon layer of the PIN diode presents a thickness of 80 μm and a width (W) of 14.5 mm. Considering that the simulated structure presents identical physical characteristics and biasing conditions to the ones shown in [7,[19][20][21][22], the validation of the simulations can be seen in Fig. 2, which shows measured and simulated diode current (ID) as a function of the anode voltage (VD).…”

“…A lateral PIN diode fabricated on an SOI wafer with an Anti-Reflection Coating (ARC) above was taken as the RD [7].…”

“…Fábio Alex da Silva fabio.a.silva@unesp.br 1 São Paulo State University (Unesp), Institute of Science and Technology, Sorocaba, Brazil 2 Centro Universitário FEI, São Bernardo do Campo, Brazil 3 Imec Leuven, Belgium An important characteristic of the PIN diode is its low dark current [6][7]. This characteristic can be important for the design of ultralow power autonomous systems.…”

“…The work has been divided into five sections. The first step, described in section 2 has been the calibration of the simulated curves to measured data from literature [7]. The simulated device, whose curves have been validated to simulations, has been called a reference device (RD), and the layout characteristics, doping characteristics, and parameter variations considered for the simulated devices are presented.…”