“…A recent paper [15] simulated 100 000 samples to analyze the impact of random dopant distribution on transistor threshold voltage by using a cluster of computers. When considering the effect of process variation, recent research has focused on modeling, simulation, and test generation of deep submicrometer defects [1], [9], [10], [13], [14], [16], [17]. Using a 45-nm technology library, an increase in the number of logic faults was observed, and tests generated for nominal operating conditions without considering process variation led to as much as 10% loss of fault coverage [9].…”