Analysis on the Light Extraction Efficiency of GaN-Based Nanowires Light-Emitting Diodes

Yue, Qing-Yang; Li, Kang; Kong, Fanmin; Zhao, Jia; Li, Wei

doi:10.1109/jqe.2013.2265167

Cited by 26 publications

(13 citation statements)

References 28 publications

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“…Light-emitting diodes (LEDs) with InGaN/GaN as the active layer has been the subject of immense studies for various applications. − Nanowire based LEDs are among the primary choices for various advantages including better light extraction efficiency due to larger surface to volume ratio, additional confinement supporting stronger electron–hole wave function overlap, and strain relaxation resulting in reduced quantum confined Stark effect. − Nanowires may have higher photon reabsorption reducing extraction efficiency; however, the deficiency can be overcome at higher excitation power and carrier injection . Moreover, these structures are relatively free from defects, which further improves the performance of these devices. − Lateral nanowires and nanowalls, in particular, belong to an important class due to the ease of fabrication and a precise process control of their positions and dimensions. − Furthermore, nanowalls, in general, are very interesting as a host device to observe various quantum mechanical phenomena at room temperature. − …”

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confidence: 99%

Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy

et al. 2017

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Here, we have demonstrated strong size dependency of quasi-equilibrium and nonequilibrium carrier and photon dynamics in InGaN/GaN single nanowalls using photoluminescence and transient absorption spectroscopy. We demonstrate that two-dimensional carrier confinement, strain relaxation, and modified density of states lead to a reduced Stokes shift, smaller full width at half-maxima, increased exciton binding energy, and reduced nonradiative recombination. The ultrafast transient spectroscopy shows that carrier capture is a two-step process dominated by optical phonons and carrier-carrier scattering in succession. The carrier capture is a strongly size-dependent process and becomes slower due to modulation of the density of available states for progressively decreasing nanowall sizes. The slowest process is the electron-hole recombination, which is also extremely size-dependent and the rate increases by almost an order of magnitude in comparison to that of quantum-well structures. Electron-hole wave function overlap and modified density of states are among the key aspects in determining all the properties of these structures.

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confidence: 99%

Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy

et al. 2017

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“…itride semiconductor nanocolumns (NCs), which are also called nanowires, nanorods, or nanopillars, have attracted a great deal of attention because of their low threading dislocation density, 1,2) high light extraction efficiency, 3) and low strain energy. 4,5) To obtain NC-based optical devices with high emission efficiencies and various emission colors, it is important to fully understand the optical properties and nanostructural effects of InGaN NCs.…”

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confidence: 99%

Effect of structural properties on optical characteristics of InGaN/GaN nanocolumns fabricated by selective-area growth

Oto

Mizuno

Yanagihara

et al. 2017

Appl. Phys. Express

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The effect of the structural properties on the optical characteristics was investigated for In0.3Ga0.7N nanocolumns (NCs) grown on GaN NCs as a function of GaN column diameter, DGaN. With increasing DGaN, the photoluminescence spectra changed from single-peak to double-peak emissions at the diameter D0 where InGaN axial NCs change to InGaN–InGaN core–shell NCs. For the core–shell NCs, the volume recombination probabilities of the InGaN cores did not change with DGaN. Whereas the surface recombination probability of the InGaN cores exponentially decreased because of the spontaneous formation of InGaN shells for DGaN > D0, it drastically increased for DGaN ≤ D0.

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“…Such twodimensional PlCs can be assembled by metal deposition onto ordered InGaN/GaN nanocolumns (NCs). [13][14][15] Notably, nanocrystalline effects of NCs such as dislocation-free nature, [16][17][18][19] low strain energy, [20][21][22][23] and efficient light extraction 24) are enhanced for smaller NCs and contribute to increased emission efficiency. Triangular-latticed Au-or Ag-based PlCs have been successfully introduced onto InGaN/GaN NCs (NC-PlCs), and thus SPP coupling has resulted in orange-red emission and IQE enhancement.…”

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confidence: 99%

Plasmonic red-light-emission enhancement by honeycomb-latticed InGaN/GaN ordered fine nanocolumn arrays

Oto,

Aihara,

Motoyama

et al. 2023

Appl. Phys. Express

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By using ordered fine nanocolumns suitable for high-efficiency red-emission, emission enhancement based on surface plasmon polariton (SPP) coupling was successfully obtained for the honeycomb lattice. This lattice enables obtaining a longer SPP resonant wavelength in the red region, which could not be attained for the triangular lattice. A 4.8-fold red-emission enhancement was achieved for the honeycomb lattice, demonstrating effective synergy between plasmonic and nanocrystalline effects within the red-emission nanocolumn system. Additionally, a 3.2-fold light-extraction enhancement was attained by changing the emission directionality by introducing plasmonic crystals (PlCs) in addition to metal reflection.

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Analysis on the Light Extraction Efficiency of GaN-Based Nanowires Light-Emitting Diodes

Cited by 26 publications

References 28 publications

Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy

Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy

Effect of structural properties on optical characteristics of InGaN/GaN nanocolumns fabricated by selective-area growth

Plasmonic red-light-emission enhancement by honeycomb-latticed InGaN/GaN ordered fine nanocolumn arrays

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