Analytical optimization of high-performance and high-yield spiral inductor in integrated passive device technology

Kim, Nam‐Young

doi:10.1016/j.mejo.2011.12.011

Cited by 34 publications

(15 citation statements)

References 19 publications

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“…The IPD has the advantages of being a simplified model, having a reduced size, and enhanced performance, benefiting from the reduction of parasitic effects compared with standard discrete systems [8,9]. Moreover, the Q-factor used to evaluate device performances is low for lumped elements but can be enhanced using IPD technology as reported in our previous studies [10][11][12]. GaAs substrates have become the second most important semiconductor materials owing to their high saturated electron drift velocity, low field mobility, low parasitics, and good interdevice isolation.…”

Section: Introductionmentioning

confidence: 98%

Fabrication of QFN-Packaged Miniaturized GaAs-Based Bandpass Filter with Intertwined Inductors and Dendritic Capacitor

et al. 2020

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This article presents a compact quad flat no-lead (QFN)-packaged second-order bandpass filter (BPF) with intertwined inductors, a dendritic capacitor, and four air-bridge structures, which was fabricated on a gallium arsenide (GaAs) substrate by integrated passive device (IPD) technology. Air-bridge structures were introduced into an approximate octagonal outer metal track to provide a miniaturized chip size of 0.021 × 0.021 λ0 (0.8 × 0.8 mm2) for the BPF. The QFN-packaged GaAs-based bandpass filter was used to protect the device from moisture and achieve good thermal and electrical performances. An equivalent circuit was modeled to analyze the BPF. A description of the manufacturing process is presented to elucidate the physical structure of the IPD-based BPF. Measurements were performed on the proposed single band BPF using a center frequency of 2.21 GHz (return loss of 26.45 dB) and a 3-dB fractional bandwidth (FBW) of 71.94% (insertion loss of 0.38 dB). The transmission zero is located at the 6.38 GHz with a restraint of 30.55 dB. The manufactured IPD-based BPF can play an excellent role in various S-band applications, such as a repeater, satellite communication, and radar, owing to its miniaturized chip size and high performance.

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Section: Introductionmentioning

confidence: 98%

Fabrication of QFN-Packaged Miniaturized GaAs-Based Bandpass Filter with Intertwined Inductors and Dendritic Capacitor

et al. 2020

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“…Therefore, IPD-based implementation of high-performance, miniaturized resonators has recently garnered an increased amount of interest from researchers [ 4 , 5 , 6 ]. IPDs typically combine a number of passive components into a single package.…”

Section: Introductionmentioning

confidence: 99%

Micro-Fabricated Resonator Based on Inscribing a Meandered-Line Coupling Capacitor in an Air-Bridged Circular Spiral Inductor

Kim

2018

Micromachines

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This letter presents a high-performance micro-fabricated resonator based on inscribing a meandered-line square coupling capacitor in an air-bridged circular spiral inductor on the GaAs-integrated passive device (IPD) technology. The main advantages of the proposed method, which inserts a highly effective coupling capacitor between the two halves of a circular spiral inductor, are the miniaturized size, enhanced coupling coefficient, and improved selectivity. Moreover, using an air-bridge structure utilizes the enhanced mutual inductance in which it maximizes the self-inductance by a stacking inductor layout to obtain a high coupling effect. The simulated and measured S-parameters of a prototype resonator with an effective overall circuit size of 1000 µm × 800 µm are in good agreement. The measured insertion and return losses of 0.41 and 24.21 dB, respectively, at a measured central frequency of 1.627 GHz, as well as an upper band transmission zero with a suppression level of 38.7 dB, indicate the excellent selectivity of the developed resonator.

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“…Various on-chip inductors are proposed in the literature such as planar inductors, Planar inductors with pattern ground shield, Symmetric inductors, series stacked inductors and pyramidal up down structures. Planar inductors [3] suffer from low Q factor, Low Q-factor is due to the resistive-capacitive losses on the silicon substrate, and also area constraints limit the inductance value. Pattern ground shield [4] is used to improve the Q factor in the cost of improved fabrication cost.…”

Section: Introductionmentioning

confidence: 99%

Fractal Parallel Stacked Inductor using Modified Hilbert Space Filling Curve for RFIC

Akhendra¹,

Bheema²

2017

CAE

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High-Quality factor miniaturized inductors are prerequisites of RFIC Applications. This paper presents a novel fractal stacked inductors using modified Hilbert space filling curve. The parallel stacked inductor with differential excitation improves the Q factor values. The results show more than 50% improvement in Q over conventional fractal inductors maintaining same inductance value with the same occupying area. General TermsModified Hilbert space filling curve, Radio Frequency IC's

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Analytical optimization of high-performance and high-yield spiral inductor in integrated passive device technology

Cited by 34 publications

References 19 publications

Fabrication of QFN-Packaged Miniaturized GaAs-Based Bandpass Filter with Intertwined Inductors and Dendritic Capacitor

Fabrication of QFN-Packaged Miniaturized GaAs-Based Bandpass Filter with Intertwined Inductors and Dendritic Capacitor

Micro-Fabricated Resonator Based on Inscribing a Meandered-Line Coupling Capacitor in an Air-Bridged Circular Spiral Inductor

Fractal Parallel Stacked Inductor using Modified Hilbert Space Filling Curve for RFIC

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