Angular Distributions of Scattered Ne and Ar Ions at the Grazing Incidence on the InGaP (001) 110 Surface

Abstract

In this paper, we report on measurements of angular distributions in grazing scattering of Ne and Ar ions incident along the 110 direction of the InGaP (001) surface. In our calculation, we used method of binary collision approximation. The specificity of the theoretical consideration of multiple scattering of ions by atoms on the surface of a solid, associated with the difficulty of describing the interaction of many particles, has led to the widespread use of methods for modeling the scattering process on the computer. Our calculations showed that changes in the fall of bombarding particles lead to a change in the angular distribution. The obtained results show that by the azimuthal scattering angle  on the coordinate of the aiming point we observe some groups of scattered ions: from the surface atomic chain; between the bottom and the surface atomic chain; from the semichannel; from the bottom of the semichannel and the neighboring surface atomic chain; from the neighboring surface atomic chain. Also, it has been shown the dependence of characteristic trajectories on the type and initial energy of incident ions, geometric parameters of the surface. This result is very interesting for the study of surface of semiconductor material.

Investigation of Angular Spectrum of Scattered Inert Gas Ions from the InGaP (001) Surface

“…In the Fig. 1 presents scheme of surfаce semichаnnel [13]. This surface semichannel consist In and Ga atoms which located on the parallel surface atomic rows and atoms P which located on the second atomic layer.…”

Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

“…Today, high‐tech materials, in contrast to bulk materials, have special surface properties with special performance characteristics 21,22 . Investigation of the processes of modification of the surface properties of materials by bombardment with electrons and ions is one of the most important areas of materials science 23–26 . Additionally, in the production of chips for doping and diffusion processes, in addition to the quality of the surface structure, the choice of the crystallographic orientation of the substrate crystals 7,23 is of great importance; for example, in the (111) plane, more defects are formed than in the (100) plane due to the high surface packing density of atoms 27 …”

“…21,22 Investigation of the processes of modification of the surface properties of materials by bombardment with electrons and ions is one of the most important areas of materials science. [23][24][25][26] Additionally, in the production of chips for doping and diffusion processes, in addition to the quality of the surface structure, the choice of the crystallographic orientation of the substrate crystals 7,23 is of great importance; for example, in the (111) plane, more defects are formed than in the (100) plane due to the high surface packing density of atoms. 27 Research in the field of defect formation plays a key role in solving the problems of nanoepitaxy 28,29 and obtaining data on the physics and chemistry of the interaction of radiation with the surface of crystals.…”

Исследование образования дефектов на поверхности кристаллов LiF при бомбардировке ионами цезия

“…На сегодняшний день высокотехнологичные материалы, в отличие от объемных, имеют особые поверхностные свойства со специальными рабочими характеристиками [14]. Исследование процессов модификации поверхностных свойств материалов при бомбардировке ©Академия наук Республики Узбекистан, 2022 г. электронами и ионами является одним из важнейших направлений материаловедения [15][16][17][18].…”